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LSE65R180GT-VB Product details
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1. LSE65R180GT-VB Product Introduction
LSE65R180GT-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its drain-source voltage can reach 650V, the maximum drain current is 20A, and the on-resistance is 160mΩ when the gate-source voltage is 10V. LSE65R180GT-VB adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, with excellent conductivity and thermal performance, suitable for power management, motor drive, switching power supply and other high-performance applications.
LSE65R180GT-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its drain-source voltage can reach 650V, the maximum drain current is 20A, and the on-resistance is 160mΩ when the gate-source voltage is 10V. LSE65R180GT-VB adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, with excellent conductivity and thermal performance, suitable for power management, motor drive, switching power supply and other high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of LSE65R180GT-VB
1. **Package type**: TO263
- This package is designed to provide superior heat dissipation performance and small size, suitable for high power density application scenarios.
2. **Channel type**: Single-N-Channel
- Supports efficient current control and switching operation, suitable for a variety of power supplies and switching circuits.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance enables it to work safely and stably in high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range, suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- This threshold voltage ensures the reliability of the device while operating at high efficiency.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Lower on-resistance can effectively reduce power loss and improve overall system efficiency.
7. **Drain current (ID)**: 20A
- Maximum drain current is suitable for medium power applications and can handle larger loads.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology can effectively reduce conduction loss and improve switching performance, ensuring excellent performance of the device in high frequency and high temperature environments.
1. **Package type**: TO263
- This package is designed to provide superior heat dissipation performance and small size, suitable for high power density application scenarios.
2. **Channel type**: Single-N-Channel
- Supports efficient current control and switching operation, suitable for a variety of power supplies and switching circuits.
3. **Drain-source voltage (VDS)**: 650V
- High voltage tolerance enables it to work safely and stably in high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible gate-source voltage range, suitable for a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- This threshold voltage ensures the reliability of the device while operating at high efficiency.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Lower on-resistance can effectively reduce power loss and improve overall system efficiency.
7. **Drain current (ID)**: 20A
- Maximum drain current is suitable for medium power applications and can handle larger loads.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology can effectively reduce conduction loss and improve switching performance, ensuring excellent performance of the device in high frequency and high temperature environments.
Domain and module applications：
III. Application fields and module examples
1. **Switching power supply (SMPS)**
LSE65R180GT-VB is very suitable for switching power supply applications, especially in industrial power supplies and consumer electronics. Its 650V withstand voltage and 20A current handling capacity ensure the efficient operation and reliability of the system.
2. **Electric vehicle power management**
This MOSFET can be used in the power management system of electric vehicles. As a switching element, it can effectively control the charging and discharging process of the battery, ensuring the safe and efficient operation of electric vehicles under different working conditions.
3. **LED lighting drive circuit**
LSE65R180GT-VB can be widely used in LED lighting drive circuits to ensure the stability and efficiency of LEDs under high power conditions while reducing heat loss.
4. **Motor drive and control**
This MOSFET is suitable for motor drive systems. As a switching element, it provides fast response and high-efficiency current control to improve the overall performance of the motor.
5. **Uninterruptible Power Supply (UPS)**
In UPS systems, LSE65R180GT-VB can be used for battery management and power switching to ensure reliable power supply in the event of a power outage and provide efficient energy conversion.
6. **Renewable Energy Inverter**
This MOSFET is suitable for use in solar inverters to convert DC power into AC power, meet high voltage and high power requirements, and achieve efficient energy conversion and management.
1. **Switching power supply (SMPS)**
LSE65R180GT-VB is very suitable for switching power supply applications, especially in industrial power supplies and consumer electronics. Its 650V withstand voltage and 20A current handling capacity ensure the efficient operation and reliability of the system.
2. **Electric vehicle power management**
This MOSFET can be used in the power management system of electric vehicles. As a switching element, it can effectively control the charging and discharging process of the battery, ensuring the safe and efficient operation of electric vehicles under different working conditions.
3. **LED lighting drive circuit**
LSE65R180GT-VB can be widely used in LED lighting drive circuits to ensure the stability and efficiency of LEDs under high power conditions while reducing heat loss.
4. **Motor drive and control**
This MOSFET is suitable for motor drive systems. As a switching element, it provides fast response and high-efficiency current control to improve the overall performance of the motor.
5. **Uninterruptible Power Supply (UPS)**
In UPS systems, LSE65R180GT-VB can be used for battery management and power switching to ensure reliable power supply in the event of a power outage and provide efficient energy conversion.
6. **Renewable Energy Inverter**
This MOSFET is suitable for use in solar inverters to convert DC power into AC power, meet high voltage and high power requirements, and achieve efficient energy conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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