LSE20N65-VB Product details
Product introduction:
LSE20N65-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for 650V high-voltage applications. It is designed to provide excellent electrical performance and thermal stability, especially under conditions requiring high voltage and high current. Its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), which enables it to have low power consumption under high load conditions. The maximum drain current (ID) of LSE20N65-VB is 20A, which is suitable for various switching power supplies and power management applications. The device adopts SJ_Multi-EPI technology, has good temperature stability and reliability, and is widely used in power management and high-efficiency systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Device type**: N-channel MOSFET
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (Ptot)**: 50W
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Breakdown voltage**: >650V
Domain and module applications:
1. **High-voltage switching power supply (SMPS)**
- LSE20N65-VB is particularly suitable for high-voltage switching power supply design. Its 650V drain-source voltage enables it to handle high voltage during power conversion, thereby improving the efficiency and stability of the entire power system. This is particularly outstanding in power adapters and LED drivers.
2. **Motor driver**
- This MOSFET is also widely used in motor control systems. It can work stably under high voltage and high current conditions. It is very suitable for electric vehicles, power tools and industrial motor control to ensure efficient motor drive and control performance.
3. **Renewable energy system**
- LSE20N65-VB is widely used in solar inverters and wind power generation systems. It can effectively convert high-voltage DC into AC, providing a reliable solution for the efficient use of renewable energy.
4. **Power Management System**
- Suitable for various power management modules, LSE20N65-VB can effectively manage current under high load conditions, ensuring the stability and efficiency of the system under high voltage operation, and is widely used in industrial power distribution and uninterruptible power supply (UPS) systems.
5. **High Voltage Lighting System**
- This MOSFET can also be used in high voltage LED lighting systems to effectively control the current of LEDs under high voltage conditions, ensuring the performance and life of LED lamps, and providing a reliable solution for modern lighting.
Through its excellent electrical performance and versatility, LSE20N65-VB has become an ideal choice for high voltage applications and is widely used in many fields to meet the needs of high efficiency and high reliability.
Technical support:
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