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LSE20N65F-VB Product details
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LSE20N65F-VB Product Introduction
LSE20N65F-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 600V, and the gate-source voltage (VGS) is ±30V, which is suitable for various power electronics applications. The gate threshold voltage (Vth) of the device is 3.5V, ensuring that it can be turned on at a lower voltage. The on-resistance (RDS(ON)) of LSE20N65F-VB is 190mΩ at VGS = 10V, and the maximum drain current (ID) is 20A. Using SJ_Multi-EPI technology, this MOSFET has excellent thermal stability and reliability, and is suitable for electronic circuits with high efficiency requirements.
LSE20N65F-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 600V, and the gate-source voltage (VGS) is ±30V, which is suitable for various power electronics applications. The gate threshold voltage (Vth) of the device is 3.5V, ensuring that it can be turned on at a lower voltage. The on-resistance (RDS(ON)) of LSE20N65F-VB is 190mΩ at VGS = 10V, and the maximum drain current (ID) is 20A. Using SJ_Multi-EPI technology, this MOSFET has excellent thermal stability and reliability, and is suitable for electronic circuits with high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description of LSE20N65F-VB
1. **Package type**: TO263
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 190mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO263
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 190mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: LSE20N65F-VB is very suitable for high-voltage switching power supply design. In power conversion, the high voltage and low on-resistance performance of this MOSFET can effectively reduce energy loss, improve overall efficiency, and meet the needs of industrial power supply.
2. **Inverter**: This MOSFET is suitable for inverter circuits, especially solar inverters and wind power inverters. LSE20N65F-VB can work stably at high voltage, help achieve efficient DC to AC power conversion, and support the application of renewable energy.
3. **Motor drive**: In the field of motor control, LSE20N65F-VB can be used as an efficient switching element, providing precise current control, and is suitable for starting and speed regulation of various motors. Its excellent thermal performance ensures safe and stable operation of the motor under high load.
4. **Lighting driver**: LSE20N65F-VB can be widely used in LED lighting driver circuits. It can effectively control the switching of high-power LEDs, reduce energy loss in the driver circuit, and achieve higher lighting efficiency and lower heat generation.
5. **Power management system**: This MOSFET is also suitable for power management modules, such as DC-DC converters and battery management systems, to help achieve efficient power conversion and management, and improve the reliability and stability of the overall system.
LSE20N65F-VB is a MOSFET that combines high voltage, high current and low on-resistance. It is widely used in modern power electronic equipment to meet various high-performance and high-reliability requirements.
1. **Switching power supply**: LSE20N65F-VB is very suitable for high-voltage switching power supply design. In power conversion, the high voltage and low on-resistance performance of this MOSFET can effectively reduce energy loss, improve overall efficiency, and meet the needs of industrial power supply.
2. **Inverter**: This MOSFET is suitable for inverter circuits, especially solar inverters and wind power inverters. LSE20N65F-VB can work stably at high voltage, help achieve efficient DC to AC power conversion, and support the application of renewable energy.
3. **Motor drive**: In the field of motor control, LSE20N65F-VB can be used as an efficient switching element, providing precise current control, and is suitable for starting and speed regulation of various motors. Its excellent thermal performance ensures safe and stable operation of the motor under high load.
4. **Lighting driver**: LSE20N65F-VB can be widely used in LED lighting driver circuits. It can effectively control the switching of high-power LEDs, reduce energy loss in the driver circuit, and achieve higher lighting efficiency and lower heat generation.
5. **Power management system**: This MOSFET is also suitable for power management modules, such as DC-DC converters and battery management systems, to help achieve efficient power conversion and management, and improve the reliability and stability of the overall system.
LSE20N65F-VB is a MOSFET that combines high voltage, high current and low on-resistance. It is widely used in modern power electronic equipment to meet various high-performance and high-reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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