LSE20N60-VB Product details
Product introduction:
LSE20N60-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its drain-source withstand voltage (VDS) is up to 600V, suitable for circuits that require high voltage tolerance. The gate-source voltage (VGS) of this MOSFET can reach ±30V, and the threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) is 190mΩ @ VGS=10V, the maximum drain current (ID) can reach 20A, and it uses SJ_Multi-EPI technology with good switching performance and low conduction loss. This MOSFET is ideal for efficient power management and control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **High-voltage switching power supply (SMPS)**
LSE20N60-VB is very suitable for high-voltage switching power supply design. Its 600V withstand voltage and low on-resistance of 190mΩ can effectively reduce switching losses and improve conversion efficiency, and is widely used in computer power supplies and industrial power supplies.
2. **Motor drive system**
This MOSFET can be widely used in motor drive systems, especially in applications requiring higher voltage and current. Its maximum drain current capability of 20A ensures the stability of the motor during startup and operation, and is suitable for industrial motor drives and power tools.
3. **Battery management system**
LSE20N60-VB can be used for high-voltage battery charge and discharge management, especially in electric vehicles and energy storage systems. Its excellent switching characteristics and high voltage withstand capability ensure the safe and efficient operation of the battery under different working conditions.
4. **Renewable energy applications**
This MOSFET is suitable for use in solar inverters and wind power generation systems, and can handle the high-voltage DC conversion part. Its good current control capability further improves the energy conversion efficiency and supports the application of renewable energy.
5. **LED lighting control**
LSE20N60-VB can also be used in LED drive circuits, especially in high-voltage LED lighting systems. Its low on-resistance and high voltage withstand capability can provide a stable current to ensure efficient lighting and extended service life of the LED.
With its high withstand voltage and low on-resistance characteristics, LSE20N60-VB is an ideal choice for high-voltage power management and control applications, ensuring efficient and reliable operation of equipment.
Technical support:
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