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LSE11N65-VB Product details
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1. LSE11N65-VB Product Introduction
LSE11N65-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. The device has a drain-source voltage withstand capability of 650V, a maximum drain current of 15A, and an on-resistance of 300mΩ at a gate-source voltage of 10V. LSE11N65-VB adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, providing excellent conductivity and thermal performance, suitable for power management, switching power supplies and other high-efficiency power applications.
LSE11N65-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. The device has a drain-source voltage withstand capability of 650V, a maximum drain current of 15A, and an on-resistance of 300mΩ at a gate-source voltage of 10V. LSE11N65-VB adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, providing excellent conductivity and thermal performance, suitable for power management, switching power supplies and other high-efficiency power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of LSE11N65-VB
1. **Package type**: TO263
- This package has excellent heat dissipation capability and miniaturized design, suitable for high-power and compact circuits.
2. **Channel type**: Single-N-Channel
- Suitable for various switching circuits and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage characteristics ensure safety and stability under high voltage working conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range enhances the flexibility of the device in a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures good reliability of the device during the switching process.
6. **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- Lower on-resistance helps reduce power loss and improve system efficiency.
7. **Drain current (ID)**: 15A
- Maximum drain current is suitable for a variety of medium-power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology enables MOSFET to have lower conduction loss and higher switching efficiency, ensuring excellent performance.
1. **Package type**: TO263
- This package has excellent heat dissipation capability and miniaturized design, suitable for high-power and compact circuits.
2. **Channel type**: Single-N-Channel
- Suitable for various switching circuits and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage characteristics ensure safety and stability under high voltage working conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range enhances the flexibility of the device in a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Ensures good reliability of the device during the switching process.
6. **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- Lower on-resistance helps reduce power loss and improve system efficiency.
7. **Drain current (ID)**: 15A
- Maximum drain current is suitable for a variety of medium-power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology enables MOSFET to have lower conduction loss and higher switching efficiency, ensuring excellent performance.
Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**
LSE11N65-VB is very suitable for switching power supply systems, especially in industrial power supplies and consumer electronic devices. Its 650V withstand voltage and 15A maximum drain current ensure the stability and safety of the power supply under high voltage input conditions.
2. **Electric Vehicle Charging System**
This MOSFET is suitable for the charging system of electric vehicles. As the main switching element, it can efficiently manage the charging and discharging process of the battery to ensure the safety and efficiency of charging.
3. **LED Lighting Driver**
LSE11N65-VB can be widely used in LED driver power supplies to ensure the stable operation of LEDs under high power and high voltage conditions. Its low on-resistance characteristics help improve the overall energy efficiency of LED lighting.
4. **Uninterruptible Power Supply (UPS)**
In UPS systems, this MOSFET can be used for battery management to ensure power supply in the event of a power outage. Its high withstand voltage and high current characteristics can meet the reliability requirements of UPS systems.
5. **Motor control**
LSE11N65-VB can be used in motor drive and control circuits. As a switching element, it can effectively control the start, run and stop process of the motor, and improve the overall efficiency and response speed of the motor.
6. **Solar inverter**
This MOSFET is suitable for use in solar inverters to convert DC to AC, ensuring efficient energy conversion in renewable energy systems, while having good thermal performance and voltage carrying capacity.
1. **Switching Power Supply (SMPS)**
LSE11N65-VB is very suitable for switching power supply systems, especially in industrial power supplies and consumer electronic devices. Its 650V withstand voltage and 15A maximum drain current ensure the stability and safety of the power supply under high voltage input conditions.
2. **Electric Vehicle Charging System**
This MOSFET is suitable for the charging system of electric vehicles. As the main switching element, it can efficiently manage the charging and discharging process of the battery to ensure the safety and efficiency of charging.
3. **LED Lighting Driver**
LSE11N65-VB can be widely used in LED driver power supplies to ensure the stable operation of LEDs under high power and high voltage conditions. Its low on-resistance characteristics help improve the overall energy efficiency of LED lighting.
4. **Uninterruptible Power Supply (UPS)**
In UPS systems, this MOSFET can be used for battery management to ensure power supply in the event of a power outage. Its high withstand voltage and high current characteristics can meet the reliability requirements of UPS systems.
5. **Motor control**
LSE11N65-VB can be used in motor drive and control circuits. As a switching element, it can effectively control the start, run and stop process of the motor, and improve the overall efficiency and response speed of the motor.
6. **Solar inverter**
This MOSFET is suitable for use in solar inverters to convert DC to AC, ensuring efficient energy conversion in renewable energy systems, while having good thermal performance and voltage carrying capacity.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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