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LSE11N65E-VB Product details
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LSE11N65E-VB Product Introduction
The LSE11N65E-VB is a high-performance N-channel power MOSFET in a TO263 package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) can reach 650V, which is suitable for high voltage requirements in various industrial and consumer electronic devices. The device has a drain current (ID) of 11A and a low on-resistance (RDS(ON)) of 420mΩ at a VGS of 10V, which means that power losses can be significantly reduced during operation. The LSE11N65E-VB uses advanced SJ_Multi-EPI technology and has excellent switching performance and thermal stability, making it an ideal choice for high voltage applications.
The LSE11N65E-VB is a high-performance N-channel power MOSFET in a TO263 package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) can reach 650V, which is suitable for high voltage requirements in various industrial and consumer electronic devices. The device has a drain current (ID) of 11A and a low on-resistance (RDS(ON)) of 420mΩ at a VGS of 10V, which means that power losses can be significantly reduced during operation. The LSE11N65E-VB uses advanced SJ_Multi-EPI technology and has excellent switching performance and thermal stability, making it an ideal choice for high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 11A | 420mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
LSE11N65E-VB Detailed parameter description
- **Model**: LSE11N65E-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 420mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: LSE11N65E-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 420mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
LSE11N65E-VB MOSFET is widely used in the following fields and modules:
1. **Switching Power Supply**: This MOSFET is used as the main switching element in the switching power supply design, suitable for AC-DC and DC-DC converters, and can achieve efficient power conversion and meet the requirements of high voltage power supply.
2. **Motor Drive**: LSE11N65E-VB can be used to control DC motors and stepper motors, suitable for power tools, home appliances and electric vehicles, etc., to achieve efficient power control and regulation.
3. **Inverter**: In solar inverters and other power conversion equipment, this device can efficiently convert and regulate power, helping to achieve the effective use of renewable energy.
4. **LED Driver**: LSE11N65E-VB can be used as a switching element in high-power LED lighting, providing efficient current control to ensure stable operation and long life of LED modules.
5. **Battery Management System**: In the battery charging and management system, this MOSFET can effectively control the charging and discharging process, improve the charging efficiency and safety of the battery, and is suitable for electric vehicles and energy storage systems.
Through these applications, the LSE11N65E-VB has become an ideal choice for high-voltage power conversion and industrial control applications with its high voltage, high current handling capabilities and excellent switching performance.
LSE11N65E-VB MOSFET is widely used in the following fields and modules:
1. **Switching Power Supply**: This MOSFET is used as the main switching element in the switching power supply design, suitable for AC-DC and DC-DC converters, and can achieve efficient power conversion and meet the requirements of high voltage power supply.
2. **Motor Drive**: LSE11N65E-VB can be used to control DC motors and stepper motors, suitable for power tools, home appliances and electric vehicles, etc., to achieve efficient power control and regulation.
3. **Inverter**: In solar inverters and other power conversion equipment, this device can efficiently convert and regulate power, helping to achieve the effective use of renewable energy.
4. **LED Driver**: LSE11N65E-VB can be used as a switching element in high-power LED lighting, providing efficient current control to ensure stable operation and long life of LED modules.
5. **Battery Management System**: In the battery charging and management system, this MOSFET can effectively control the charging and discharging process, improve the charging efficiency and safety of the battery, and is suitable for electric vehicles and energy storage systems.
Through these applications, the LSE11N65E-VB has become an ideal choice for high-voltage power conversion and industrial control applications with its high voltage, high current handling capabilities and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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