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LSE11N60E-VB Product details

Product introduction:

Product Introduction
LSE11N60E-VB is a high-performance N-channel power MOSFET designed in TO263 package and optimized for high voltage applications. Its rated drain-source voltage (VDS) is 600V, which can handle power management and power conversion under high voltage conditions. The device has an on-resistance (RDS(ON)) of 380mΩ at a gate voltage (VGS) of 10V and a maximum drain current (ID) of up to 11A. LSE11N60E-VB uses SJ_Multi-EPI technology to ensure its stability and reliability under harsh working conditions, and is suitable for the high-efficiency requirements of modern electronic equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: LSE11N60E-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (@ VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and module examples

1. **Power converters**: LSE11N60E-VB is widely used in AC-DC and DC-DC converters, suitable for scenarios that require high voltage processing, such as power adapters, industrial power supplies and chargers, to ensure stable current output and efficient energy conversion.

2. **Motor drive**: This MOSFET can be used in motor control systems, suitable for driving small motors such as fans, pumps and household appliances, providing stable performance and reliable control under high voltage.

3. **Lighting equipment**: In LED lighting systems, LSE11N60E-VB can effectively manage current output, ensuring the safe and efficient operation of LED lamps under high voltage, and is particularly suitable for high-power LED drive circuits.

4. **Industrial automation**: This device can be used as a switching element in industrial control systems, supporting high current and high voltage load control, ensuring efficient operation of automation equipment and system stability.

5. **Renewable Energy**: LSE11N60E-VB is suitable for solar inverters and wind power generation systems. It can efficiently convert and manage electricity at high voltage, improving the overall efficiency of renewable energy equipment.

LSE11N60E-VB MOSFET, with its high voltage and high efficiency, has become an indispensable component in modern electrical equipment and is suitable for various power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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