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LSE07N80A-VB Product details
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LSE07N80A-VB Product Introduction
The LSE07N80A-VB is a single N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 800V and the gate-source voltage (VGS) is ±30V, allowing it to operate normally in harsh environments. The device has a gate threshold voltage (Vth) of 3.5V, ensuring that it can be turned on at a lower voltage and provide effective conduction. The LSE07N80A-VB has an on-resistance (RDS(ON)) of 850mΩ at VGS = 10V and a maximum drain current (ID) of 7A. Using multi-junction substrate technology (SJ_Multi-EPI), this MOSFET has excellent thermal stability and reliability, making it very suitable for various power electronics applications.
The LSE07N80A-VB is a single N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is as high as 800V and the gate-source voltage (VGS) is ±30V, allowing it to operate normally in harsh environments. The device has a gate threshold voltage (Vth) of 3.5V, ensuring that it can be turned on at a lower voltage and provide effective conduction. The LSE07N80A-VB has an on-resistance (RDS(ON)) of 850mΩ at VGS = 10V and a maximum drain current (ID) of 7A. Using multi-junction substrate technology (SJ_Multi-EPI), this MOSFET has excellent thermal stability and reliability, making it very suitable for various power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description of LSE07N80A-VB
1. **Package type**: TO263
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 7A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO263
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 850mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 7A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Applications and module examples
1. **High-voltage switching power supply**: LSE07N80A-VB is ideal for high-voltage switching power supply design, capable of handling input voltages up to 800V. During power conversion, this MOSFET provides efficient conduction performance, reducing energy loss, thereby improving the overall efficiency of the system.
2. **Inverter**: In inverter applications, LSE07N80A-VB can be used as the main switching element to convert DC power to AC. Its high voltage tolerance and low on-resistance make it an ideal choice for solar inverters and wind inverters, which can effectively improve energy conversion efficiency.
3. **Motor control**: In industrial motor control systems, this MOSFET can be used for motor drive to provide reliable current control. Its robust characteristics ensure stable operation under high load conditions, suitable for starting and speed regulation applications of various motors.
4. **Lighting driver circuit**: LSE07N80A-VB is also widely used in high-power LED lighting driver circuits. It can efficiently switch LED lights, enabling better performance and energy efficiency in lighting applications while reducing heat loss in the driver circuit.
LSE07N80A-VB is a powerful MOSFET that can meet the needs of high-voltage power electronics applications. Its excellent performance and multiple application potential make it play an important role in modern power electronics equipment.
1. **High-voltage switching power supply**: LSE07N80A-VB is ideal for high-voltage switching power supply design, capable of handling input voltages up to 800V. During power conversion, this MOSFET provides efficient conduction performance, reducing energy loss, thereby improving the overall efficiency of the system.
2. **Inverter**: In inverter applications, LSE07N80A-VB can be used as the main switching element to convert DC power to AC. Its high voltage tolerance and low on-resistance make it an ideal choice for solar inverters and wind inverters, which can effectively improve energy conversion efficiency.
3. **Motor control**: In industrial motor control systems, this MOSFET can be used for motor drive to provide reliable current control. Its robust characteristics ensure stable operation under high load conditions, suitable for starting and speed regulation applications of various motors.
4. **Lighting driver circuit**: LSE07N80A-VB is also widely used in high-power LED lighting driver circuits. It can efficiently switch LED lights, enabling better performance and energy efficiency in lighting applications while reducing heat loss in the driver circuit.
LSE07N80A-VB is a powerful MOSFET that can meet the needs of high-voltage power electronics applications. Its excellent performance and multiple application potential make it play an important role in modern power electronics equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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