LSE07N70-VB Product details
Product introduction:
LSE07N70-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. The device has a drain-source withstand voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, suitable for stable operation in high voltage environments. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 600mΩ @ VGS=10V, and the maximum drain current (ID) is 10A. This MOSFET adopts SJ_Multi-EPI technology, has excellent switching performance and low conduction loss, and is widely used in various power management and control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **High-voltage switching power supply (SMPS)**
LSE07N70-VB is very suitable for use in high-voltage switching power supplies, especially those that require high efficiency and stability. Due to its 700V withstand voltage and low on-resistance, this MOSFET can reduce switching losses while improving conversion efficiency, and is suitable for the design of computer power supplies and industrial power supplies.
2. **Motor drive system**
This MOSFET can be used in various motor drive systems, especially in applications that require high voltage and high current. Its maximum drain current capability of 10A ensures the stability of the motor during startup and operation, and is widely used in industrial motor drives and power tools.
3. **Battery management system**
In the battery management system, LSE07N70-VB can be used for high-voltage battery charge and discharge management. Its excellent switching characteristics and high withstand voltage make it very suitable for use in electric vehicles and energy storage systems, ensuring the safe and effective operation of the battery under multiple working conditions.
4. **Renewable Energy Applications**
This MOSFET can be widely used in solar inverters and wind power generation systems to ensure the stability and efficiency of the high-voltage DC conversion part. Its good current control capability further improves the efficiency of energy conversion.
5. **LED Lighting Control**
LSE07N70-VB is suitable for LED drive circuits, especially in high-voltage LED lighting systems. Its low on-resistance and high voltage withstand capability enable it to provide a stable current and extend the service life of the LED.
With its high withstand voltage and low on-resistance characteristics, LSE07N70-VB is an ideal choice for high-voltage power management and control applications, ensuring efficient and reliable operation of the equipment.
Technical support:
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