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LSE04N65-VB Product details
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Product Introduction
LSE04N65-VB is a high-voltage N-channel MOSFET in a TO263 package designed for high-efficiency applications. Its drain-source voltage (VDS) can reach 650V, making it ideal for power conversion and switching circuits that require high voltage resistance. The device has a threshold voltage (Vth) of 3.5V, ensuring that it can be turned on smoothly under appropriate gate drive voltage. The on-resistance (RDS(ON)) of the LSE04N65-VB is 700mΩ@VGS=10V, which is relatively high, but it can meet the requirements of most applications when its operating current (ID) is 7A. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, can adapt to harsh working environments, and is an ideal choice for modern high-voltage power supply designs.
LSE04N65-VB is a high-voltage N-channel MOSFET in a TO263 package designed for high-efficiency applications. Its drain-source voltage (VDS) can reach 650V, making it ideal for power conversion and switching circuits that require high voltage resistance. The device has a threshold voltage (Vth) of 3.5V, ensuring that it can be turned on smoothly under appropriate gate drive voltage. The on-resistance (RDS(ON)) of the LSE04N65-VB is 700mΩ@VGS=10V, which is relatively high, but it can meet the requirements of most applications when its operating current (ID) is 7A. Using SJ_Multi-EPI technology, this MOSFET excels in thermal performance and reliability, can adapt to harsh working environments, and is an ideal choice for modern high-voltage power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSE04N65-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 700mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Description** |
|----------------------|--------------------------|
| **Model** | LSE04N65-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 700mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application fields and module examples
LSE04N65-VB is widely used in multiple fields and modules, including:
1. **Power conversion**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can effectively control current, improve energy efficiency, and reduce power consumption, and is suitable for various power adapters and industrial power supplies.
2. **Motor control**: As a switching element in the motor drive circuit, LSE04N65-VB can be used to control DC motors and stepper motors, and is widely used in the drive systems of automation equipment, electric vehicles and household appliances.
3. **LED drive**: In LED lighting and display systems, this MOSFET can efficiently drive LED lamps, enabling them to achieve high brightness output and stable working performance, and is suitable for commercial lighting and stage lighting equipment.
4. **Inverter**: In solar inverter and uninterruptible power supply (UPS) systems, LSE04N65-VB can achieve efficient power conversion and management, improve system reliability and work efficiency.
5. **Battery management system**: This device can be used in battery charging and discharging management circuits to monitor and protect the battery, improve battery life and safety.
In short, LSE04N65-VB is a high-efficiency MOSFET suitable for a variety of high-voltage and high-efficiency electronic designs, meeting the needs of modern electronic equipment for high reliability and high performance.
LSE04N65-VB is widely used in multiple fields and modules, including:
1. **Power conversion**: In switching power supplies (SMPS) and DC-DC converters (DC-DC), this MOSFET can effectively control current, improve energy efficiency, and reduce power consumption, and is suitable for various power adapters and industrial power supplies.
2. **Motor control**: As a switching element in the motor drive circuit, LSE04N65-VB can be used to control DC motors and stepper motors, and is widely used in the drive systems of automation equipment, electric vehicles and household appliances.
3. **LED drive**: In LED lighting and display systems, this MOSFET can efficiently drive LED lamps, enabling them to achieve high brightness output and stable working performance, and is suitable for commercial lighting and stage lighting equipment.
4. **Inverter**: In solar inverter and uninterruptible power supply (UPS) systems, LSE04N65-VB can achieve efficient power conversion and management, improve system reliability and work efficiency.
5. **Battery management system**: This device can be used in battery charging and discharging management circuits to monitor and protect the battery, improve battery life and safety.
In short, LSE04N65-VB is a high-efficiency MOSFET suitable for a variety of high-voltage and high-efficiency electronic designs, meeting the needs of modern electronic equipment for high reliability and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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