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LSDN65R650HT-VB Product details
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1. LSDN65R650HT-VB Product Introduction
LSDN65R650HT-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. The device has a drain-source voltage withstand capability of 650V, a maximum drain current of 9A, and an on-resistance of 550mΩ at VGS of 10V. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, LSDN65R650HT-VB has excellent conductivity and thermal properties, suitable for power management systems that require high reliability and high efficiency.
LSDN65R650HT-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. The device has a drain-source voltage withstand capability of 650V, a maximum drain current of 9A, and an on-resistance of 550mΩ at VGS of 10V. Based on SJ_Multi-EPI (Super Junction Multi-Epi) technology, LSDN65R650HT-VB has excellent conductivity and thermal properties, suitable for power management systems that require high reliability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. LSDN65R650HT-VB Detailed parameter description
1. **Package type**: TO220F
- Using TO220F package, it has good heat dissipation performance and is suitable for high-power applications.
2. **Channel type**: Single-N-Channel
- Provides excellent performance for various high-voltage switching circuits and is suitable for a variety of power supply designs.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage ensures stable operation under high voltage conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range enhances the adaptability of the device in a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Moderate threshold voltage ensures device reliability during switching.
6. **On-resistance (RDS(ON))**: 550mΩ @ VGS=10V
- Lower on-resistance helps reduce power loss and improve energy efficiency.
7. **Drain current (ID)**: 9A
- High drain current suitable for various medium-power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology enables the device to have lower conduction loss and higher switching efficiency, providing excellent performance.
1. **Package type**: TO220F
- Using TO220F package, it has good heat dissipation performance and is suitable for high-power applications.
2. **Channel type**: Single-N-Channel
- Provides excellent performance for various high-voltage switching circuits and is suitable for a variety of power supply designs.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage ensures stable operation under high voltage conditions.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range enhances the adaptability of the device in a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Moderate threshold voltage ensures device reliability during switching.
6. **On-resistance (RDS(ON))**: 550mΩ @ VGS=10V
- Lower on-resistance helps reduce power loss and improve energy efficiency.
7. **Drain current (ID)**: 9A
- High drain current suitable for various medium-power applications.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- This technology enables the device to have lower conduction loss and higher switching efficiency, providing excellent performance.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**
LSDN65R650HT-VB is very suitable for high-voltage switching power supply (SMPS), especially in industrial power supply and consumer electronics, as the main switching element. Its 650V withstand voltage characteristics ensure the safe and stable operation of the power supply at high voltage input.
2. **Motor drive**
This MOSFET is suitable for motor control applications such as DC motor and AC motor drive. Its maximum drain current of 9A and on-resistance of 550mΩ enable it to effectively control and regulate power and improve the operating efficiency of the motor.
3. **Solar inverter**
LSDN65R650HT-VB can be used in solar inverters to convert DC power into AC power. Its high voltage carrying capacity and low conduction loss characteristics can ensure efficient operation of the system and improve energy conversion efficiency in renewable energy systems.
4. **LED lighting driver**
In high-power LED lighting driver circuits, this device can provide a stable power management solution for LEDs, ensuring the stability of LEDs under high voltage and high current, and is widely used in commercial, industrial and outdoor lighting.
5. **Uninterruptible power supply (UPS)**
In UPS systems, LSDN65R650HT-VB acts as the main switching element to help achieve efficient battery charge and discharge management, ensuring continuous power supply to key equipment when power is interrupted. Its high withstand voltage and current characteristics enable it to provide good heat dissipation and power conversion capabilities while ensuring system stability.
1. **High-voltage switching power supply**
LSDN65R650HT-VB is very suitable for high-voltage switching power supply (SMPS), especially in industrial power supply and consumer electronics, as the main switching element. Its 650V withstand voltage characteristics ensure the safe and stable operation of the power supply at high voltage input.
2. **Motor drive**
This MOSFET is suitable for motor control applications such as DC motor and AC motor drive. Its maximum drain current of 9A and on-resistance of 550mΩ enable it to effectively control and regulate power and improve the operating efficiency of the motor.
3. **Solar inverter**
LSDN65R650HT-VB can be used in solar inverters to convert DC power into AC power. Its high voltage carrying capacity and low conduction loss characteristics can ensure efficient operation of the system and improve energy conversion efficiency in renewable energy systems.
4. **LED lighting driver**
In high-power LED lighting driver circuits, this device can provide a stable power management solution for LEDs, ensuring the stability of LEDs under high voltage and high current, and is widely used in commercial, industrial and outdoor lighting.
5. **Uninterruptible power supply (UPS)**
In UPS systems, LSDN65R650HT-VB acts as the main switching element to help achieve efficient battery charge and discharge management, ensuring continuous power supply to key equipment when power is interrupted. Its high withstand voltage and current characteristics enable it to provide good heat dissipation and power conversion capabilities while ensuring system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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