LSD70R570GT-VB Product details
Product introduction:
The LSD70R570GT-VB is a high voltage N-channel power MOSFET in a TO220F package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) can reach 700V, which can withstand harsh voltage conditions and is suitable for use in a variety of industrial, consumer electronics and power management fields. The device has a drain current (ID) of 10A and a low on-resistance (RDS(ON)) of 390mΩ at a VGS of 10V, ensuring effective reduction of power losses during operation. The LSD70R570GT-VB uses advanced SJ_Multi-EPI technology and has superior switching performance and thermal stability, making it an ideal choice for high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: LSD70R570GT-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
LSD70R570GT-VB MOSFET is widely used in the following fields and modules:
1. **Switching power supply**: This MOSFET is used as the main switching element in AC-DC and DC-DC converters to efficiently convert power and meet the requirements of high-voltage power supplies.
2. **Motor drive**: In various motor drive applications, LSD70R570GT-VB can control DC motors and stepper motors, helping to achieve efficient power control, and is widely used in power tools, home appliances and electric vehicles.
3. **Solar inverter**: In solar power generation systems, this device can be used as a switching element in the inverter to efficiently convert and regulate power and improve the utilization efficiency of renewable energy.
4. **LED lighting driver**: LSD70R570GT-VB is suitable for driving high-power LED lighting, ensuring efficient current control, extending the service life of LEDs and improving light efficiency.
5. **Battery Management System**: In battery charging and management systems, this MOSFET can effectively control the charging and discharging process, improve battery charging efficiency and safety, and is suitable for electric vehicles and renewable energy storage systems.
Through these applications, the LSD70R570GT-VB has become the preferred device for high-voltage power conversion and industrial control applications with its high voltage, high current handling capabilities and excellent switching performance.
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