中文
English
LSD65R930GT-VB Product details
Back to previous pageProduct introduction：
Product Introduction
The LSD65R930GT-VB is a high voltage N-channel MOSFET in a TO220F package designed for high voltage applications. With a rated drain-source voltage (VDS) of 650V, the device is suitable for a variety of power management and power conversion schemes. With an on-resistance (RDS(ON)) of 1000mΩ (at a gate voltage of 10V) and a maximum drain current (ID) of 5A, it is suitable for low to medium power applications. The LSD65R930GT-VB uses SJ_Multi-EPI technology, which has good thermal performance and reliability, enabling it to operate stably under a variety of operating conditions and meet the high performance requirements of modern electronic devices.
The LSD65R930GT-VB is a high voltage N-channel MOSFET in a TO220F package designed for high voltage applications. With a rated drain-source voltage (VDS) of 650V, the device is suitable for a variety of power management and power conversion schemes. With an on-resistance (RDS(ON)) of 1000mΩ (at a gate voltage of 10V) and a maximum drain current (ID) of 5A, it is suitable for low to medium power applications. The LSD65R930GT-VB uses SJ_Multi-EPI technology, which has good thermal performance and reliability, enabling it to operate stably under a variety of operating conditions and meet the high performance requirements of modern electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: LSD65R930GT-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (@ VGS=10V)
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: LSD65R930GT-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ (@ VGS=10V)
- **Maximum leakage current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power adapter**: The LSD65R930GT-VB is ideal for use in a variety of power adapters, especially for applications that need to handle high voltages, such as chargers and power management for electronic devices.
2. **LED lighting**: In LED drive circuits, this MOSFET can effectively control current output and is suitable for medium-power LED lamps, ensuring stability and extending the life of the LED.
3. **Motor drive**: This device can be used to drive and control small motors and is suitable for use in household appliances such as fans, pumps and small motors.
4. **Industrial control**: In industrial automation systems, the LSD65R930GT-VB can be used as a switching element and is suitable for various control circuits to ensure efficient power management and system reliability.
5. **Renewable energy systems**: This MOSFET is suitable for power conversion and management of solar cells, and can operate stably at high voltages to improve the efficiency of renewable energy systems.
The high voltage handling capability and stability of the LSD65R930GT-VB MOSFET make it an important component in power management, lighting control and industrial applications, providing efficient and reliable solutions for modern electronic devices.
1. **Power adapter**: The LSD65R930GT-VB is ideal for use in a variety of power adapters, especially for applications that need to handle high voltages, such as chargers and power management for electronic devices.
2. **LED lighting**: In LED drive circuits, this MOSFET can effectively control current output and is suitable for medium-power LED lamps, ensuring stability and extending the life of the LED.
3. **Motor drive**: This device can be used to drive and control small motors and is suitable for use in household appliances such as fans, pumps and small motors.
4. **Industrial control**: In industrial automation systems, the LSD65R930GT-VB can be used as a switching element and is suitable for various control circuits to ensure efficient power management and system reliability.
5. **Renewable energy systems**: This MOSFET is suitable for power conversion and management of solar cells, and can operate stably at high voltages to improve the efficiency of renewable energy systems.
The high voltage handling capability and stability of the LSD65R930GT-VB MOSFET make it an important component in power management, lighting control and industrial applications, providing efficient and reliable solutions for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
