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LSD65R760GT-VB Product details
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1. LSD65R760GT-VB Product Introduction
LSD65R760GT-VB is a high-performance single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V, suitable for high-voltage power supply and switching power supply applications. The threshold voltage (Vth) of the device is 3.5V, and its on-resistance (RDS(ON)) is 700mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 7A. LSD65R760GT-VB adopts SJ_Multi-EPI technology, with high reliability and excellent thermal performance, suitable for various applications requiring high voltage and high efficiency.
LSD65R760GT-VB is a high-performance single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V, suitable for high-voltage power supply and switching power supply applications. The threshold voltage (Vth) of the device is 3.5V, and its on-resistance (RDS(ON)) is 700mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 7A. LSD65R760GT-VB adopts SJ_Multi-EPI technology, with high reliability and excellent thermal performance, suitable for various applications requiring high voltage and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. LSD65R760GT-VB Detailed parameter description
- **Device type**: N-channel MOSFET
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (Ptot)**: 50W
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Breakdown voltage**: >650V
- **Device type**: N-channel MOSFET
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (Ptot)**: 50W
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Breakdown voltage**: >650V
Domain and module applications：
3. Application fields and module description
1. **High-voltage switching power supply (SMPS)**
- LSD65R760GT-VB is widely used in high-voltage switching power supply design. It can switch efficiently at high voltage, which helps to reduce energy loss and improve overall system efficiency. It is suitable for power adapters and LED drivers.
2. **Motor control system**
- In motor drive and control systems, this MOSFET can handle high voltage and high current, and is suitable for high-voltage inverters to provide efficient drive for motors and improve control performance and reliability.
3. **Power management module**
- LSD65R760GT-VB is suitable for use in various power management modules, which can provide efficient current management and regulation to ensure stability under high load conditions, especially in industrial power distribution and UPS systems.
4. **Renewable energy applications**
- In solar inverters and wind power systems, LSD65R760GT-VB can be used to convert high-voltage DC to AC, and can work stably at high efficiency, suitable for various renewable energy power generation applications.
5. **LED lighting system**
- This MOSFET is also used in LED driver power supplies, which can effectively control the current of LEDs under high voltage conditions, ensure the performance and long life of LED lamps, and provide a reliable choice for modern lighting solutions.
With its excellent performance and reliability, LSD65R760GT-VB is widely used in many fields, meets the stringent requirements of high-voltage applications, and is an ideal choice for power management and control systems.
1. **High-voltage switching power supply (SMPS)**
- LSD65R760GT-VB is widely used in high-voltage switching power supply design. It can switch efficiently at high voltage, which helps to reduce energy loss and improve overall system efficiency. It is suitable for power adapters and LED drivers.
2. **Motor control system**
- In motor drive and control systems, this MOSFET can handle high voltage and high current, and is suitable for high-voltage inverters to provide efficient drive for motors and improve control performance and reliability.
3. **Power management module**
- LSD65R760GT-VB is suitable for use in various power management modules, which can provide efficient current management and regulation to ensure stability under high load conditions, especially in industrial power distribution and UPS systems.
4. **Renewable energy applications**
- In solar inverters and wind power systems, LSD65R760GT-VB can be used to convert high-voltage DC to AC, and can work stably at high efficiency, suitable for various renewable energy power generation applications.
5. **LED lighting system**
- This MOSFET is also used in LED driver power supplies, which can effectively control the current of LEDs under high voltage conditions, ensure the performance and long life of LED lamps, and provide a reliable choice for modern lighting solutions.
With its excellent performance and reliability, LSD65R760GT-VB is widely used in many fields, meets the stringent requirements of high-voltage applications, and is an ideal choice for power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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