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LSD65R650HT-VB Product details
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LSD65R650HT-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and high current applications, especially suitable for use in power electronics. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V, ensuring wide compatibility. The gate threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 550mΩ at a gate voltage of 10V. The maximum drain current (ID) is 9A. This MOSFET adopts multi-junction substrate technology (SJ_Multi-EPI), which has high reliability and thermal stability and is suitable for a variety of power electronics applications.
LSD65R650HT-VB's
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Package type: TO220F
Channel configuration: Single N-channel
Drain-source voltage (VDS): 650V
Gate-source voltage (VGS): ±30V
Gate threshold voltage (Vth): 3.5V
On-resistance (RDS(ON)):
550mΩ @ VGS = 10V
Maximum drain current (ID): 9A
Technology type: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Power converters: The LSD65R650HT-VB is suitable for high-voltage switching power supply designs. In power converters, this MOSFET can effectively handle high input voltages of 650V and achieve high-efficiency power conversion. Its low on-resistance characteristics can reduce energy losses, thereby improving the efficiency of the overall system.
Motor control systems: In industrial motor control applications, this MOSFET can be used as the main switching element to provide efficient current control capabilities. Whether in motor starting, speed regulation or power regulation, the LSD65R650HT-VB can achieve precise control and improve the response speed of the system.
Inverter applications: The LSD65R650HT-VB is also widely used in inverter designs, especially in the field of renewable energy, such as solar and wind inverters. This MOSFET can effectively convert DC power into AC power, meeting the demand for efficient power devices for renewable energy generation.
Lighting drive circuit: This MOSFET can be used in high-power LED lighting systems as a switching element to provide efficient energy conversion. Due to its low on-resistance, it can effectively reduce energy loss in the drive circuit and improve overall lighting efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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