LSD65R570GT-VB Product details
Product introduction:
LSD65R570GT-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. The device has a drain-source withstand voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 550mΩ @ VGS=10V, and the maximum drain current is 9A. This MOSFET adopts SJ_Multi-EPI technology to ensure its excellent conductivity and switching characteristics, and is suitable for demanding power management and control circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 550mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **High-voltage power converter**
LSD65R570GT-VB is very suitable for high-voltage switching power supply (SMPS). Its high voltage withstand capability of 650V and low on-resistance make it have low switching loss in power conversion, improve the efficiency of power supply, and is suitable for computer power supply, industrial power supply and consumer electronics.
2. **Motor drive and control**
This MOSFET can be used in motor control systems, especially in high-voltage and high-current drive applications, to ensure the stability of the motor during startup and operation. It is suitable for control systems of various industrial motor drives and power tools.
3. **Renewable energy system**
LSD65R570GT-VB is suitable for the high-voltage DC conversion part of solar inverters and wind power generation systems. Its efficient switching characteristics can improve energy conversion efficiency and ensure the overall performance of the system.
4. **LED lighting control**
This MOSFET can be used in LED drive circuits, especially in LED lighting systems that require high voltage control, to provide stable current and extend the life of the LED.
5. **Battery management system**
In the battery management system, LSD65R570GT-VB can be used for high-voltage battery charge and discharge management, ensuring the safe and effective operation of the battery under multiple working conditions, suitable for electric vehicles and energy storage systems.
Through its high withstand voltage and low on-resistance characteristics, LSD65R570GT-VB is an ideal choice for high-voltage power management and control applications, ensuring efficient and reliable operation of the equipment.
Technical support:
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