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LSD65R180GT-VB Product details
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Product Introduction
LSD65R180GT-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) of 650V, the device is suitable for power conversion and switching applications that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring that it can be effectively turned on under appropriate gate drive voltage. The MOSFET has an RDS(ON) of 160mΩ@VGS=10V, which has a low on-resistance, reduces conduction losses, and improves overall energy efficiency. The maximum continuous current (ID) is 20A, making it suitable for a variety of medium-power electronic devices. Using SJ_Multi-EPI technology, the LSD65R180GT-VB can provide excellent thermal performance and higher reliability to adapt to harsh working environments.
LSD65R180GT-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high-voltage applications. With a drain-source voltage (VDS) of 650V, the device is suitable for power conversion and switching applications that require high voltage resistance. Its threshold voltage (Vth) is 3.5V, ensuring that it can be effectively turned on under appropriate gate drive voltage. The MOSFET has an RDS(ON) of 160mΩ@VGS=10V, which has a low on-resistance, reduces conduction losses, and improves overall energy efficiency. The maximum continuous current (ID) is 20A, making it suitable for a variety of medium-power electronic devices. Using SJ_Multi-EPI technology, the LSD65R180GT-VB can provide excellent thermal performance and higher reliability to adapt to harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|------------------|--------------------------|
| **Model** | LSD65R180GT-VB |
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 160mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 20A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Description** |
|------------------|--------------------------|
| **Model** | LSD65R180GT-VB |
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 160mΩ @ VGS=10V |
| **Maximum Continuous Current (ID)** | 20A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application fields and module examples
LSD65R180GT-VB is suitable for multiple fields, including but not limited to:
1. **Power management**: In switching power supplies and DC-DC converters, this MOSFET can effectively control current, reduce power consumption, and improve power efficiency. It is widely used in consumer electronics, industrial power supplies, and computer power modules.
2. **Motor drive**: This MOSFET can be used as a switching element in motor control circuits to achieve efficient motor drive and control, and is used in electric vehicles and automation equipment.
3. **LED driver power**: In LED lighting and display systems, LSD65R180GT-VB can be used to efficiently drive LEDs to achieve good brightness and long life.
4. **Battery management system**: This device can be used in battery charging and protection circuits to monitor and manage the battery charging and discharging process to improve the safety and reliability of the system.
5. **Power amplifier**: In RF power amplifiers and audio amplifiers, this MOSFET can be used to increase the output power of the signal and reduce distortion.
In short, LSD65R180GT-VB is an excellent MOSFET, which is widely used in various high-voltage and high-efficiency electronic designs to meet the needs of modern electronic equipment for high performance and high reliability.
LSD65R180GT-VB is suitable for multiple fields, including but not limited to:
1. **Power management**: In switching power supplies and DC-DC converters, this MOSFET can effectively control current, reduce power consumption, and improve power efficiency. It is widely used in consumer electronics, industrial power supplies, and computer power modules.
2. **Motor drive**: This MOSFET can be used as a switching element in motor control circuits to achieve efficient motor drive and control, and is used in electric vehicles and automation equipment.
3. **LED driver power**: In LED lighting and display systems, LSD65R180GT-VB can be used to efficiently drive LEDs to achieve good brightness and long life.
4. **Battery management system**: This device can be used in battery charging and protection circuits to monitor and manage the battery charging and discharging process to improve the safety and reliability of the system.
5. **Power amplifier**: In RF power amplifiers and audio amplifiers, this MOSFET can be used to increase the output power of the signal and reduce distortion.
In short, LSD65R180GT-VB is an excellent MOSFET, which is widely used in various high-voltage and high-efficiency electronic designs to meet the needs of modern electronic equipment for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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