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LSD65R180GF-VB Product details
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1. LSD65R180GF-VB Product Introduction
LSD65R180GF-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage, maximum drain current of 20A and on-resistance of 160mΩ (at VGS=10V). Based on advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, the device provides low conduction loss and high switching efficiency, making it very suitable for high-voltage and high-power applications. Its excellent reliability and thermal management capabilities make it widely used in multiple industries.
LSD65R180GF-VB is a high-performance single N-channel MOSFET in TO220F package with 650V drain-source voltage, maximum drain current of 20A and on-resistance of 160mΩ (at VGS=10V). Based on advanced SJ_Multi-EPI (super junction multi-epitaxial) technology, the device provides low conduction loss and high switching efficiency, making it very suitable for high-voltage and high-power applications. Its excellent reliability and thermal management capabilities make it widely used in multiple industries.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of LSD65R180GF-VB
1. **Package type**: TO220F
- Using TO220F package with insulation, it provides excellent heat dissipation performance and is suitable for high-power and high-current application scenarios.
2. **Channel type**: Single-N-Channel
- Suitable for a variety of high-voltage switching circuits with low switching losses.
3. **Drain-source voltage (VDS)**: 650V
- High voltage carrying capacity to ensure stable operation in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is wide, compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Medium threshold voltage ensures the stability of the device during switching.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Low on-resistance helps reduce power loss and improve circuit efficiency.
7. **Drain current (ID)**: 20A
- Can carry large current, suitable for high-power application requirements.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- Provides high-efficiency and stable solutions by reducing conduction loss and improving switching performance.
1. **Package type**: TO220F
- Using TO220F package with insulation, it provides excellent heat dissipation performance and is suitable for high-power and high-current application scenarios.
2. **Channel type**: Single-N-Channel
- Suitable for a variety of high-voltage switching circuits with low switching losses.
3. **Drain-source voltage (VDS)**: 650V
- High voltage carrying capacity to ensure stable operation in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The allowable gate-source voltage range is wide, compatible with a variety of circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Medium threshold voltage ensures the stability of the device during switching.
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- Low on-resistance helps reduce power loss and improve circuit efficiency.
7. **Drain current (ID)**: 20A
- Can carry large current, suitable for high-power application requirements.
8. **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi Technology)
- Provides high-efficiency and stable solutions by reducing conduction loss and improving switching performance.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**
LSD65R180GF-VB is very suitable for high-voltage switching power supply (SMPS), and can be used as the main switching element in industrial power supplies and consumer electronics. Its 650V withstand voltage characteristics ensure safe and stable operation of the power supply at high voltage input.
2. **Motor drive**
This MOSFET is suitable for motor control applications such as DC motor and AC motor drives. Its 20A maximum drain current and low on-resistance enable it to effectively control and regulate power when driving high-power motors, improving the efficiency and performance of the motor.
3. **Inverter**
LSD65R180GF-VB can be applied to solar inverters and other power inverters to help convert DC power to AC power. Its high withstand voltage and low conduction loss characteristics are very suitable for use in renewable energy systems, improving the overall efficiency of the system.
4. **LED lighting system**
In high-power LED lighting drive circuits, this device provides an efficient power management solution for high-voltage LEDs, ensuring stable operation of LEDs under high voltages, and is widely used in commercial and outdoor lighting.
5. **Uninterruptible power supply (UPS)**
In UPS systems, LSD65R180GF-VB, as the main switching element, helps achieve efficient battery charge and discharge management, ensuring continuous operation of equipment during power outages. Its high voltage and current characteristics ensure the stability and reliability of the system.
1. **High-voltage switching power supply**
LSD65R180GF-VB is very suitable for high-voltage switching power supply (SMPS), and can be used as the main switching element in industrial power supplies and consumer electronics. Its 650V withstand voltage characteristics ensure safe and stable operation of the power supply at high voltage input.
2. **Motor drive**
This MOSFET is suitable for motor control applications such as DC motor and AC motor drives. Its 20A maximum drain current and low on-resistance enable it to effectively control and regulate power when driving high-power motors, improving the efficiency and performance of the motor.
3. **Inverter**
LSD65R180GF-VB can be applied to solar inverters and other power inverters to help convert DC power to AC power. Its high withstand voltage and low conduction loss characteristics are very suitable for use in renewable energy systems, improving the overall efficiency of the system.
4. **LED lighting system**
In high-power LED lighting drive circuits, this device provides an efficient power management solution for high-voltage LEDs, ensuring stable operation of LEDs under high voltages, and is widely used in commercial and outdoor lighting.
5. **Uninterruptible power supply (UPS)**
In UPS systems, LSD65R180GF-VB, as the main switching element, helps achieve efficient battery charge and discharge management, ensuring continuous operation of equipment during power outages. Its high voltage and current characteristics ensure the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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