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LSD55R140GT-VB Product details

Product introduction:

1. LSD55R140GT-VB Product Introduction

LSD55R140GT-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for 500V high-voltage power supply applications. With a threshold voltage (Vth) of 3.5V, this MOSFET can provide a low on-resistance (RDS(ON)) of 140mΩ at a gate voltage of 10V, enabling it to perform well at high currents with a maximum drain current (ID) of 30A. The device uses SJ_Multi-EPI technology, has excellent thermal stability and low conduction losses, and is suitable for a variety of high-efficiency and high-reliability power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 500V 3.5V 30A 140mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. LSD55R140GT-VB Detailed parameter description

- **Device type**: N-channel MOSFET
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (Ptot)**: 70W
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Breakdown voltage**: >500V

Domain and module applications:

3. Application fields and module description

1. **Switching power supply (SMPS)**
- LSD55R140GT-VB is commonly used in high-voltage switching power supplies, especially in high-power output power modules, which can effectively reduce conduction losses, improve power conversion efficiency, and support a wide range of voltage and current applications.

2. **Motor control and drive**
- In motor drive systems, this MOSFET is suitable for high-voltage inverters and motor controllers, which can handle high currents and achieve fast switching, improving the operating efficiency and response speed of the motor.

3. **Power management**
- LSD55R140GT-VB is widely used in power management modules, especially in smart grids and energy storage systems, which can achieve effective power distribution and conversion under high voltage conditions to ensure high efficiency of the system.

4. **LED lighting drive**
- This MOSFET is also suitable for LED lighting control systems, which can operate stably under high voltage environments and provide efficient current management, thereby optimizing the performance and life of LED lamps.

5. **Renewable Energy Inverter**
- In solar and wind power generation systems, LSD55R140GT-VB is an important power conversion device that can effectively convert high-voltage DC power into AC power, suitable for various renewable energy applications.

With its excellent electrical performance and reliability, LSD55R140GT-VB is widely used in power management, industrial automation, electric vehicles and renewable energy fields, providing an ideal solution for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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