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LSD55R140GF-VB Product details
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LSD55R140GF-VB Product Introduction
LSD55R140GF-VB is a single N-channel MOSFET in TO220F package with a high drain-source voltage (VDS) of 500V, designed to meet the needs of high voltage and high current applications. The device has a gate-source voltage (VGS) range of ±30V and a gate threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) is 140mΩ at a gate voltage of 10V and the maximum drain current (ID) is 30A. This MOSFET uses multi-junction substrate technology (SJ_Multi-EPI) and has excellent conduction performance and stability, making it suitable for a variety of high-voltage power electronics applications.
LSD55R140GF-VB is a single N-channel MOSFET in TO220F package with a high drain-source voltage (VDS) of 500V, designed to meet the needs of high voltage and high current applications. The device has a gate-source voltage (VGS) range of ±30V and a gate threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) is 140mΩ at a gate voltage of 10V and the maximum drain current (ID) is 30A. This MOSFET uses multi-junction substrate technology (SJ_Multi-EPI) and has excellent conduction performance and stability, making it suitable for a variety of high-voltage power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description of LSD55R140GF-VB
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 140mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 30A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 140mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 30A
8. **Technology type**: Multi-junction substrate technology (SJ_Multi-EPI)
Domain and module applications：
Application fields and module examples
1. **Switching power supply**: LSD55R140GF-VB is very suitable for the design of high-voltage switching power supply. Its drain-source voltage of up to 500V and drain current capability of 30A make it perform well in power converters, effectively handling high voltage inputs and ensuring the stability and efficiency of the power supply.
2. **Motor drive**: In industrial motor drive applications, this MOSFET can be used as the main switching element in the drive circuit to provide efficient current control. Whether in motor starting, speed regulation or inverter, LSD55R140GF-VB can effectively improve the response speed and control accuracy of the system.
3. **Inverter**: LSD55R140GF-VB can be used in inverter systems, especially in renewable energy applications (such as solar and wind energy). It can realize DC to AC conversion, and has high efficiency and durability, meeting the needs of high-performance power devices for renewable energy generation.
4. **Lighting drive circuit**: In LED lighting systems, LSD55R140GF-VB can be used as a switching element to help achieve efficient energy conversion. Its low on-resistance ensures that when driving high-power LEDs, it can effectively reduce energy consumption and improve the efficiency of the overall lighting system.
With its high voltage tolerance, excellent conduction performance and flexibility in multiple applications, LSD55R140GF-VB has become an ideal choice for high-voltage switching power supplies, motor drives, inverters and lighting drive circuits.
1. **Switching power supply**: LSD55R140GF-VB is very suitable for the design of high-voltage switching power supply. Its drain-source voltage of up to 500V and drain current capability of 30A make it perform well in power converters, effectively handling high voltage inputs and ensuring the stability and efficiency of the power supply.
2. **Motor drive**: In industrial motor drive applications, this MOSFET can be used as the main switching element in the drive circuit to provide efficient current control. Whether in motor starting, speed regulation or inverter, LSD55R140GF-VB can effectively improve the response speed and control accuracy of the system.
3. **Inverter**: LSD55R140GF-VB can be used in inverter systems, especially in renewable energy applications (such as solar and wind energy). It can realize DC to AC conversion, and has high efficiency and durability, meeting the needs of high-performance power devices for renewable energy generation.
4. **Lighting drive circuit**: In LED lighting systems, LSD55R140GF-VB can be used as a switching element to help achieve efficient energy conversion. Its low on-resistance ensures that when driving high-power LEDs, it can effectively reduce energy consumption and improve the efficiency of the overall lighting system.
With its high voltage tolerance, excellent conduction performance and flexibility in multiple applications, LSD55R140GF-VB has become an ideal choice for high-voltage switching power supplies, motor drives, inverters and lighting drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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