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LSD20N65-VB Product details
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1. LSD20N65-VB Product Introduction
LSD20N65-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. The device has a drain-source withstand voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, making it ideal for high-voltage power conversion and control circuits. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, and the maximum drain current is 20A. Using SJ_Multi-EPI technology, LSD20N65-VB provides excellent switching characteristics and thermal stability, suitable for a variety of high-performance and high-reliability electrical applications.
LSD20N65-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications. The device has a drain-source withstand voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, making it ideal for high-voltage power conversion and control circuits. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS=10V, and the maximum drain current is 20A. Using SJ_Multi-EPI technology, LSD20N65-VB provides excellent switching characteristics and thermal stability, suitable for a variety of high-performance and high-reliability electrical applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. LSD20N65-VB Detailed parameter description
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. Applicable fields and application modules
1. **Switching power supply (SMPS)**
LSD20N65-VB performs well in switching power supply applications, especially in high voltage and high efficiency conversion situations. Its low on-resistance can effectively reduce switching losses and improve system efficiency, and is suitable for power adapters and industrial power supplies.
2. **Motor drive and control**
This MOSFET can be widely used in motor drivers, especially in situations where high voltage control is required, such as motor drive systems. Its high withstand voltage and high current capabilities enable it to handle the high voltage pulses generated during motor starting and operation.
3. **Battery management system**
In the battery management system, LSD20N65-VB can be used for high voltage battery charge and discharge management. Its stability and reliability ensure the safe and efficient operation of the battery under a variety of operating conditions.
4. **LED lighting and drivers**
This MOSFET is also suitable for the high voltage part of LED lighting system, providing stable current control, thus improving the efficiency and service life of LED lamps.
5. **High voltage inverter**
LSD20N65-VB can be used in high voltage inverters, especially in solar inverters, where its high voltage and current handling capabilities ensure high efficiency and stable operation of the system.
With these characteristics, the device is widely used in the high voltage field to ensure stable and efficient power transmission and conversion, meeting the growing energy efficiency requirements of modern electronic devices.
1. **Switching power supply (SMPS)**
LSD20N65-VB performs well in switching power supply applications, especially in high voltage and high efficiency conversion situations. Its low on-resistance can effectively reduce switching losses and improve system efficiency, and is suitable for power adapters and industrial power supplies.
2. **Motor drive and control**
This MOSFET can be widely used in motor drivers, especially in situations where high voltage control is required, such as motor drive systems. Its high withstand voltage and high current capabilities enable it to handle the high voltage pulses generated during motor starting and operation.
3. **Battery management system**
In the battery management system, LSD20N65-VB can be used for high voltage battery charge and discharge management. Its stability and reliability ensure the safe and efficient operation of the battery under a variety of operating conditions.
4. **LED lighting and drivers**
This MOSFET is also suitable for the high voltage part of LED lighting system, providing stable current control, thus improving the efficiency and service life of LED lamps.
5. **High voltage inverter**
LSD20N65-VB can be used in high voltage inverters, especially in solar inverters, where its high voltage and current handling capabilities ensure high efficiency and stable operation of the system.
With these characteristics, the device is widely used in the high voltage field to ensure stable and efficient power transmission and conversion, meeting the growing energy efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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