中文
English
LSD20N60-VB Product details
Back to previous pageProduct introduction：
LSD20N60-VB MOSFET Product Introduction
LSD20N60-VB is a single N-channel power MOSFET packaged in TO220F, with excellent switching performance and efficient conduction characteristics. Its voltage resistance is up to 600V, which can withstand large voltage changes and is suitable for applications requiring high-voltage circuits. Its on-resistance (RDS(ON)) is 150mΩ@VGS=10V, with low power consumption, which helps to improve the overall efficiency of the system. LSD20N60-VB uses advanced super junction (SJ_Multi-EPI) technology, which can reduce the on-resistance while ensuring the reliability and stability of the device under high voltage. Its maximum drain current (ID) is 20A, which can withstand large load currents and meet various high-power conversion needs.
LSD20N60-VB is a single N-channel power MOSFET packaged in TO220F, with excellent switching performance and efficient conduction characteristics. Its voltage resistance is up to 600V, which can withstand large voltage changes and is suitable for applications requiring high-voltage circuits. Its on-resistance (RDS(ON)) is 150mΩ@VGS=10V, with low power consumption, which helps to improve the overall efficiency of the system. LSD20N60-VB uses advanced super junction (SJ_Multi-EPI) technology, which can reduce the on-resistance while ensuring the reliability and stability of the device under high voltage. Its maximum drain current (ID) is 20A, which can withstand large load currents and meet various high-power conversion needs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
LSD20N60-VB MOSFET detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 150mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Maximum gate-source voltage (VGS_max)**: ±30V
- **Maximum power dissipation (Pd)**: Depending on the specific application conditions, the typical value is generally around 125W
- **Operating temperature range**: -55°C to 150°C
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 150mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Maximum gate-source voltage (VGS_max)**: ±30V
- **Maximum power dissipation (Pd)**: Depending on the specific application conditions, the typical value is generally around 125W
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and modules of LSD20N60-VB MOSFET
1. **Power conversion and management modules**
LSD20N60-VB is very suitable for high-efficiency power conversion applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS) and DC-DC converters. Its high withstand voltage of 600V and low on-resistance ensure reduced losses and improved overall efficiency during power conversion.
2. **Motor drive control module**
In industrial and household appliances, LSD20N60-VB can be used for motor drive control, such as inverters, motor controllers, etc. Its high current carrying capacity and super junction technology can provide stable and efficient power transmission and reduce heat generation.
3. **Inverter and photovoltaic system**
In inverter and photovoltaic system, LSD20N60-VB can be applied to DC to AC power conversion to meet the requirements of high voltage and high efficiency. The addition of super junction technology enables it to maintain excellent performance under high voltage, ensuring the reliability and durability of the system.
4. **Home appliance applications**
This MOSFET is also widely used in power control modules in home appliances, such as microwave ovens, induction cookers and other high-power devices. Its superior conduction characteristics and high current carrying capacity ensure that the equipment operates efficiently under high power conditions.
LSD20N60-VB is a versatile high-voltage power MOSFET, whose characteristics make it suitable for power conversion and control systems that require high efficiency and high stability.
1. **Power conversion and management modules**
LSD20N60-VB is very suitable for high-efficiency power conversion applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS) and DC-DC converters. Its high withstand voltage of 600V and low on-resistance ensure reduced losses and improved overall efficiency during power conversion.
2. **Motor drive control module**
In industrial and household appliances, LSD20N60-VB can be used for motor drive control, such as inverters, motor controllers, etc. Its high current carrying capacity and super junction technology can provide stable and efficient power transmission and reduce heat generation.
3. **Inverter and photovoltaic system**
In inverter and photovoltaic system, LSD20N60-VB can be applied to DC to AC power conversion to meet the requirements of high voltage and high efficiency. The addition of super junction technology enables it to maintain excellent performance under high voltage, ensuring the reliability and durability of the system.
4. **Home appliance applications**
This MOSFET is also widely used in power control modules in home appliances, such as microwave ovens, induction cookers and other high-power devices. Its superior conduction characteristics and high current carrying capacity ensure that the equipment operates efficiently under high power conditions.
LSD20N60-VB is a versatile high-voltage power MOSFET, whose characteristics make it suitable for power conversion and control systems that require high efficiency and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
