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LSD11N70-VB Product details
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LSD11N70-VB Product Introduction
LSD11N70-VB is a high voltage N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) can reach 700V, which can withstand harsh voltage conditions and is suitable for various industrial and power conversion applications. The device has a drain current (ID) of 11A and an on-resistance (RDS(ON)) of 450mΩ at a VGS of 10V, ensuring low power consumption and high efficiency. LSD11N70-VB adopts SJ_Multi-EPI technology, has excellent switching performance and thermal stability, and is suitable for use in high voltage power conversion, lighting, motor drive and other fields.
LSD11N70-VB is a high voltage N-channel power MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-to-source voltage (VDS) can reach 700V, which can withstand harsh voltage conditions and is suitable for various industrial and power conversion applications. The device has a drain current (ID) of 11A and an on-resistance (RDS(ON)) of 450mΩ at a VGS of 10V, ensuring low power consumption and high efficiency. LSD11N70-VB adopts SJ_Multi-EPI technology, has excellent switching performance and thermal stability, and is suitable for use in high voltage power conversion, lighting, motor drive and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
LSD11N70-VB Detailed parameter description
- **Model**: LSD11N70-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: LSD11N70-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 450mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
LSD11N70-VB MOSFET is suitable for the following areas and modules:
1. **Switching Power Supply**: LSD11N70-VB can be used as the main switching device in AC-DC and DC-DC converters, providing efficient energy conversion and suitable for high-voltage power supply modules.
2. **Motor Drive**: This device can be used to drive DC motors and stepper motors. With its high current handling capability and stable performance, it ensures smooth and energy-efficient motor operation.
3. **Solar Inverter**: In inverter applications, LSD11N70-VB is suitable for power conversion and regulation under high voltage conditions, helping to improve energy efficiency, especially in solar power generation systems.
4. **Lighting Drive**: LSD11N70-VB can be used as a switching element in LED lighting drivers. With its high voltage and high current handling capabilities, it meets the needs of high-power lighting systems.
5. **Industrial Power Systems**: In high-voltage industrial power systems, the LSD11N70-VB ensures reliable power management and system operation through efficient switching characteristics and high-voltage resistance.
Through these applications, the LSD11N70-VB is an ideal choice for high-voltage power conversion and industrial control applications with its high voltage, high current handling capabilities and excellent switching performance.
LSD11N70-VB MOSFET is suitable for the following areas and modules:
1. **Switching Power Supply**: LSD11N70-VB can be used as the main switching device in AC-DC and DC-DC converters, providing efficient energy conversion and suitable for high-voltage power supply modules.
2. **Motor Drive**: This device can be used to drive DC motors and stepper motors. With its high current handling capability and stable performance, it ensures smooth and energy-efficient motor operation.
3. **Solar Inverter**: In inverter applications, LSD11N70-VB is suitable for power conversion and regulation under high voltage conditions, helping to improve energy efficiency, especially in solar power generation systems.
4. **Lighting Drive**: LSD11N70-VB can be used as a switching element in LED lighting drivers. With its high voltage and high current handling capabilities, it meets the needs of high-power lighting systems.
5. **Industrial Power Systems**: In high-voltage industrial power systems, the LSD11N70-VB ensures reliable power management and system operation through efficient switching characteristics and high-voltage resistance.
Through these applications, the LSD11N70-VB is an ideal choice for high-voltage power conversion and industrial control applications with its high voltage, high current handling capabilities and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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