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LSD11N60F-VB Product details
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1. LSD11N60F-VB Product Introduction
LSD11N60F-VB is a single N-channel MOSFET in TO220F package, designed for high voltage, high efficiency conversion applications. The device has a drain-source withstand voltage (VDS) of 600V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 380mΩ @ VGS=10V, and the maximum drain current is 11A. Optimized by SJ_Multi-EPI technology, the device maintains low loss in high voltage operation and is suitable for providing efficient and reliable switching performance in high voltage applications such as power conversion and industrial equipment.
LSD11N60F-VB is a single N-channel MOSFET in TO220F package, designed for high voltage, high efficiency conversion applications. The device has a drain-source withstand voltage (VDS) of 600V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 380mΩ @ VGS=10V, and the maximum drain current is 11A. Optimized by SJ_Multi-EPI technology, the device maintains low loss in high voltage operation and is suitable for providing efficient and reliable switching performance in high voltage applications such as power conversion and industrial equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. LSD11N60F-VB Detailed parameter description
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Applicable fields and application modules
1. **Photovoltaic inverter**
LSD11N60F-VB plays a key role in the inverter of photovoltaic power generation system, handling high voltage and performing efficient conversion from DC to AC. Its high withstand voltage and low conduction loss make it excel in energy conversion equipment.
2. **Industrial power conversion**
This device is suitable for the high-voltage conversion part of industrial power systems, such as UPS (uninterruptible power supply) and motor control systems. It is able to handle high voltage and provide stable current control when the load changes.
3. **High-voltage switching power supply (SMPS)**
LSD11N60F-VB is often used in high-voltage switching power supplies, especially in circuits that require efficient energy conversion under high voltage conditions. Its low conduction loss characteristics help improve the overall efficiency of the system.
4. **Battery Management System**
In the battery management system, this MOSFET can support high voltage charge and discharge management, ensuring the safe operation of the battery under various working conditions, especially suitable for high voltage battery applications.
5. **LED Driver and Lighting System**
LSD11N60F-VB can also be used in the high voltage part of the LED driver to ensure the stable and efficient operation of LED lighting under high voltage, especially suitable for high power LED lighting and commercial lighting systems.
With these characteristics, the device is widely used in the high voltage field to ensure stable and efficient power transmission and conversion.
1. **Photovoltaic inverter**
LSD11N60F-VB plays a key role in the inverter of photovoltaic power generation system, handling high voltage and performing efficient conversion from DC to AC. Its high withstand voltage and low conduction loss make it excel in energy conversion equipment.
2. **Industrial power conversion**
This device is suitable for the high-voltage conversion part of industrial power systems, such as UPS (uninterruptible power supply) and motor control systems. It is able to handle high voltage and provide stable current control when the load changes.
3. **High-voltage switching power supply (SMPS)**
LSD11N60F-VB is often used in high-voltage switching power supplies, especially in circuits that require efficient energy conversion under high voltage conditions. Its low conduction loss characteristics help improve the overall efficiency of the system.
4. **Battery Management System**
In the battery management system, this MOSFET can support high voltage charge and discharge management, ensuring the safe operation of the battery under various working conditions, especially suitable for high voltage battery applications.
5. **LED Driver and Lighting System**
LSD11N60F-VB can also be used in the high voltage part of the LED driver to ensure the stable and efficient operation of LED lighting under high voltage, especially suitable for high power LED lighting and commercial lighting systems.
With these characteristics, the device is widely used in the high voltage field to ensure stable and efficient power transmission and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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