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LSD11N60E-VB Product details
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LSD11N60E-VB Product Introduction
LSD11N60E-VB is a high voltage unipolar N-channel MOSFET in TO220F package with 600V drain-source voltage, suitable for high voltage power conversion and switching applications. The device has a maximum drain current of 11A, providing strong current handling capability. With its low on-resistance (RDS(ON)), LSD11N60E-VB can effectively reduce the conduction loss of the system. This MOSFET adopts SJ_Multi-EPI technology to improve the thermal stability and reliability of the device, suitable for use in high-performance and high-voltage application environments.
LSD11N60E-VB is a high voltage unipolar N-channel MOSFET in TO220F package with 600V drain-source voltage, suitable for high voltage power conversion and switching applications. The device has a maximum drain current of 11A, providing strong current handling capability. With its low on-resistance (RDS(ON)), LSD11N60E-VB can effectively reduce the conduction loss of the system. This MOSFET adopts SJ_Multi-EPI technology to improve the thermal stability and reliability of the device, suitable for use in high-performance and high-voltage application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
LSD11N60E-VB Detailed parameter description
- **Model**: LSD11N60E-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Model**: LSD11N60E-VB
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**: LSD11N60E-VB is suitable for high-voltage power management devices such as switching power supplies and DC-DC converters. Its 600V withstand voltage and low on-resistance help improve conversion efficiency and reduce power loss, making it an ideal choice for efficient power systems.
2. **Industrial control equipment**: This MOSFET is widely used in industrial automation equipment, especially as a power switch in high-voltage circuits, which can ensure the stability and safety of the circuit while reducing heat loss and power consumption.
3. **Power tools**: LSD11N60E-VB can be used in the power management and control modules of power tools to help achieve fast switching and stable current supply, extend tool life, and improve efficiency.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, this device can be used as a high-voltage switch for solar inverters to help achieve efficient energy conversion and transmission, while reducing power loss and improving the overall energy efficiency and reliability of the inverter.
5. **Home appliances**: LSD11N60E-VB is suitable for use in high-voltage home appliances such as air conditioners and refrigerators. Through efficient power management and control, it can improve equipment performance and reduce energy consumption.
LSD11N60E-VB is suitable for fields that require high voltage, high efficiency and high reliability, especially in power conversion, industrial control and electric equipment.
1. **High-voltage power converter**: LSD11N60E-VB is suitable for high-voltage power management devices such as switching power supplies and DC-DC converters. Its 600V withstand voltage and low on-resistance help improve conversion efficiency and reduce power loss, making it an ideal choice for efficient power systems.
2. **Industrial control equipment**: This MOSFET is widely used in industrial automation equipment, especially as a power switch in high-voltage circuits, which can ensure the stability and safety of the circuit while reducing heat loss and power consumption.
3. **Power tools**: LSD11N60E-VB can be used in the power management and control modules of power tools to help achieve fast switching and stable current supply, extend tool life, and improve efficiency.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, this device can be used as a high-voltage switch for solar inverters to help achieve efficient energy conversion and transmission, while reducing power loss and improving the overall energy efficiency and reliability of the inverter.
5. **Home appliances**: LSD11N60E-VB is suitable for use in high-voltage home appliances such as air conditioners and refrigerators. Through efficient power management and control, it can improve equipment performance and reduce energy consumption.
LSD11N60E-VB is suitable for fields that require high voltage, high efficiency and high reliability, especially in power conversion, industrial control and electric equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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