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LSD07N80A-VB Product details
Back to previous pageProduct introduction：
1. LSD07N80A-VB Product Introduction
LSD07N80A-VB is a high-voltage single N-channel MOSFET in TO220F package, designed to withstand drain-source voltage up to 800V. Its on-resistance (RDS(ON)) is 1100mΩ, maximum drain current (ID) is 5A, and it adopts advanced SJ_Multi-EPI technology. This MOSFET provides excellent switching performance and thermal management capabilities, suitable for a variety of high-voltage power supply and switching circuit applications. With low conduction loss and high reliability, LSD07N80A-VB is an ideal choice for high-efficiency power conversion and control systems.
LSD07N80A-VB is a high-voltage single N-channel MOSFET in TO220F package, designed to withstand drain-source voltage up to 800V. Its on-resistance (RDS(ON)) is 1100mΩ, maximum drain current (ID) is 5A, and it adopts advanced SJ_Multi-EPI technology. This MOSFET provides excellent switching performance and thermal management capabilities, suitable for a variety of high-voltage power supply and switching circuit applications. With low conduction loss and high reliability, LSD07N80A-VB is an ideal choice for high-efficiency power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. LSD07N80A-VB Detailed parameter description
1. **Package type**: TO220F
- Provides good heat dissipation performance, suitable for high power and high current applications, easy to dissipate heat and install.
2. **Channel type**: Single-N-Channel
- Suitable for high voltage switching, with excellent conduction performance and low switching loss.
3. **Drain-source voltage (VDS)**: 800V
- High withstand voltage characteristics, suitable for high voltage switching and power conversion, able to withstand high voltage working environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible driving voltage range, compatible with a variety of control circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Under reasonable gate drive, ensure normal switching of the device.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- Moderate on-resistance helps reduce power loss and is suitable for medium power applications.
7. **Drain current (ID)**: 5A
- Suitable for medium power applications and meets the needs of high voltage occasions.
8. **Technology**: SJ_Multi-EPI
- This technology improves the performance of MOSFET, reduces switching loss, and enhances the reliability and thermal stability of the device.
1. **Package type**: TO220F
- Provides good heat dissipation performance, suitable for high power and high current applications, easy to dissipate heat and install.
2. **Channel type**: Single-N-Channel
- Suitable for high voltage switching, with excellent conduction performance and low switching loss.
3. **Drain-source voltage (VDS)**: 800V
- High withstand voltage characteristics, suitable for high voltage switching and power conversion, able to withstand high voltage working environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible driving voltage range, compatible with a variety of control circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Under reasonable gate drive, ensure normal switching of the device.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- Moderate on-resistance helps reduce power loss and is suitable for medium power applications.
7. **Drain current (ID)**: 5A
- Suitable for medium power applications and meets the needs of high voltage occasions.
8. **Technology**: SJ_Multi-EPI
- This technology improves the performance of MOSFET, reduces switching loss, and enhances the reliability and thermal stability of the device.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**
LSD07N80A-VB can be widely used in high-voltage switch mode power supplies (SMPS), such as in power adapters and industrial power supplies. It can effectively handle high voltages of 800V and provide reliable solutions for power conversion.
2. **Motor control**
This MOSFET can be used in motor drive applications, especially in the drive circuits of DC motors and AC motors that require high voltage. It is suitable for high-voltage motor control such as industrial equipment, household appliances and power tools.
3. **LED lighting system**
LSD07N80A-VB is suitable for high-voltage LED drive circuits, providing stable current for high-intensity LED lamps, ensuring lighting efficiency and reliability, and is widely used in commercial lighting and residential lighting.
4. **Photovoltaic inverter**
In the photovoltaic inverter, the device acts as a switching element to convert the DC power generated by solar cells into AC power. Its high voltage carrying capacity and reliability make it suitable for use in photovoltaic power generation systems, helping to improve energy conversion efficiency.
1. **High-voltage switching power supply**
LSD07N80A-VB can be widely used in high-voltage switch mode power supplies (SMPS), such as in power adapters and industrial power supplies. It can effectively handle high voltages of 800V and provide reliable solutions for power conversion.
2. **Motor control**
This MOSFET can be used in motor drive applications, especially in the drive circuits of DC motors and AC motors that require high voltage. It is suitable for high-voltage motor control such as industrial equipment, household appliances and power tools.
3. **LED lighting system**
LSD07N80A-VB is suitable for high-voltage LED drive circuits, providing stable current for high-intensity LED lamps, ensuring lighting efficiency and reliability, and is widely used in commercial lighting and residential lighting.
4. **Photovoltaic inverter**
In the photovoltaic inverter, the device acts as a switching element to convert the DC power generated by solar cells into AC power. Its high voltage carrying capacity and reliability make it suitable for use in photovoltaic power generation systems, helping to improve energy conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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