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LSD04N65A-VB Product details
Back to previous pageProduct introduction：
1. LSD04N65A-VB Product Introduction
LSD04N65A-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for use in high-voltage circuits. The device has an on-resistance (RDS(ON)) of 1000mΩ and a maximum drain current (ID) of 5A. It uses SJ_Multi-EPI technology to ensure excellent switching performance and thermal management capabilities. LSD04N65A-VB performs well in power management, switching power supplies and other high-voltage industrial applications, and is an ideal choice for high efficiency and high reliability.
LSD04N65A-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for use in high-voltage circuits. The device has an on-resistance (RDS(ON)) of 1000mΩ and a maximum drain current (ID) of 5A. It uses SJ_Multi-EPI technology to ensure excellent switching performance and thermal management capabilities. LSD04N65A-VB performs well in power management, switching power supplies and other high-voltage industrial applications, and is an ideal choice for high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. LSD04N65A-VB Detailed parameter description
1. **Package type**: TO220F
- This package provides good heat dissipation performance, suitable for high power and high current applications, easy to dissipate heat and install.
2. **Channel type**: Single-N-Channel
- High voltage switch with good conduction performance and low conduction loss.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage characteristics, suitable for high voltage switching and power conversion, able to withstand high voltage working environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible drive voltage range, compatible with a variety of control circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Under reasonable gate drive, ensure normal switching of the device.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Higher on-resistance may lead to greater power loss, suitable for some low-power applications.
7. **Drain current (ID)**: 5A
- Suitable for medium-power applications and meet the needs of high-voltage occasions.
8. **Technology**: SJ_Multi-EPI
- This technology improves the performance of MOSFET, reduces switching losses, and enhances the reliability and thermal stability of the device.
1. **Package type**: TO220F
- This package provides good heat dissipation performance, suitable for high power and high current applications, easy to dissipate heat and install.
2. **Channel type**: Single-N-Channel
- High voltage switch with good conduction performance and low conduction loss.
3. **Drain-source voltage (VDS)**: 650V
- High withstand voltage characteristics, suitable for high voltage switching and power conversion, able to withstand high voltage working environment.
4. **Gate-source voltage (VGS)**: ±30V
- Provides a flexible drive voltage range, compatible with a variety of control circuit designs.
5. **Threshold voltage (Vth)**: 3.5V
- Under reasonable gate drive, ensure normal switching of the device.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Higher on-resistance may lead to greater power loss, suitable for some low-power applications.
7. **Drain current (ID)**: 5A
- Suitable for medium-power applications and meet the needs of high-voltage occasions.
8. **Technology**: SJ_Multi-EPI
- This technology improves the performance of MOSFET, reduces switching losses, and enhances the reliability and thermal stability of the device.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**
LSD04N65A-VB can be widely used in high-voltage switch mode power supplies (SMPS), especially when 650V voltage is required. Its high voltage withstand characteristics and moderate current capability enable it to work effectively in industrial power supplies, computer power adapters, and household appliances.
2. **Motor drive**
In motor control applications, this MOSFET can be used in high-voltage DC motor and AC motor drive circuits, especially suitable for applications such as power tools, industrial equipment, and household appliances, and can provide stable drive and control.
3. **LED lighting**
LSD04N65A-VB can be applied to high-voltage LED lighting drive circuits, suitable for use in high-intensity LED lamps, ensuring stable current output to improve lighting efficiency. This MOSFET is suitable for LED lighting modules and lamps that require high voltage.
4. **Photovoltaic Inverter**
This device can be used as a switching element in a photovoltaic inverter to convert the direct current generated by solar cells into alternating current. Its high voltage carrying capacity and high reliability make it very suitable for use in photovoltaic power generation systems.
1. **High-voltage switching power supply**
LSD04N65A-VB can be widely used in high-voltage switch mode power supplies (SMPS), especially when 650V voltage is required. Its high voltage withstand characteristics and moderate current capability enable it to work effectively in industrial power supplies, computer power adapters, and household appliances.
2. **Motor drive**
In motor control applications, this MOSFET can be used in high-voltage DC motor and AC motor drive circuits, especially suitable for applications such as power tools, industrial equipment, and household appliances, and can provide stable drive and control.
3. **LED lighting**
LSD04N65A-VB can be applied to high-voltage LED lighting drive circuits, suitable for use in high-intensity LED lamps, ensuring stable current output to improve lighting efficiency. This MOSFET is suitable for LED lighting modules and lamps that require high voltage.
4. **Photovoltaic Inverter**
This device can be used as a switching element in a photovoltaic inverter to convert the direct current generated by solar cells into alternating current. Its high voltage carrying capacity and high reliability make it very suitable for use in photovoltaic power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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