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LSB65R070GF-VB Product details

Product introduction:

LSB65R070GF-VB Product Introduction

The LSB65R070GF-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 650V, which can provide stable power control in a high voltage environment. The device supports a gate-source voltage (VGS) of ±30V, a gate threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 75mΩ at a gate voltage of 10V, and a maximum drain current (ID) of 47A. These parameters make the LSB65R070GF-VB an excellent performer in applications requiring high power and high efficiency conversion. The SJ_Multi-EPI technology it uses improves the current capability and efficiency of the device while reducing conduction losses, ensuring excellent electrical performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description of LSB65R070GF-VB

1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 75mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxial technology)

Domain and module applications:

Application areas and module examples

1. **High-voltage power management**: LSB65R070GF-VB is particularly suitable for use in high-voltage switching power supplies and power conversion equipment. In these applications, it plays an important role as a switching element, significantly improving the power density and energy efficiency of the system by providing efficient power conversion, especially for server power supplies, communication equipment and industrial power supplies.

2. **Photovoltaic inverter**: In photovoltaic systems, LSB65R070GF-VB can be used in inverter modules to provide efficient DC-AC conversion functions. The device's 650V withstand voltage enables it to handle higher voltage solar panel arrays and ensures excellent conduction performance under high power conditions, improving the energy efficiency of the entire system.

3. **Electric vehicle charging pile**: In electric vehicle charging equipment, LSB65R070GF-VB can ensure the safety and reliability of the charging system by providing high voltage and high current support. Its low conduction loss and high switching speed enable the charging pile to maintain high conversion efficiency under high power output conditions.

4. **UPS (Uninterruptible Power Supply) System**: In an uninterruptible power supply (UPS), this MOSFET is used for efficient power conversion and distribution. Its high current handling capability and low on-resistance enable it to effectively reduce energy loss in UPS systems, thereby extending battery life and ensuring the continuity of power supply.

The LSB65R070GF-VB is widely used in application scenarios that require high voltage and high power density, such as industrial power supplies, inverters, and electric vehicle charging equipment. Its strong current handling capability and excellent switching performance ensure the reliability and efficiency of the device in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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