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LSB60R170GF-VB Product details
Back to previous pageProduct introduction：
：**
LSB60R170GF-VB is a single N-channel power MOSFET in TO247 package, suitable for high voltage and high power applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and its gate threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) of LSB60R170GF-VB is 160mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 20A. The device uses super junction multi-epitaxial technology (SJ_Multi-EPI), which provides low conduction loss and high breakdown voltage, and performs well in high efficiency and high power density applications.
**2. LSB60R170GF-VB
LSB60R170GF-VB is a single N-channel power MOSFET in TO247 package, suitable for high voltage and high power applications. The device has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and its gate threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) of LSB60R170GF-VB is 160mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 20A. The device uses super junction multi-epitaxial technology (SJ_Multi-EPI), which provides low conduction loss and high breakdown voltage, and performs well in high efficiency and high power density applications.
**2. LSB60R170GF-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
：**
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption**: Typical power consumption is 200W, suitable for high-power applications.
**Three, LSB60R170GF-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to +150°C
- **Power consumption**: Typical power consumption is 200W, suitable for high-power applications.
**Three, LSB60R170GF-VB
Domain and module applications：
：**
1. **High-voltage power converter**: The LSB60R170GF-VB is particularly suitable for high-voltage power converters, such as switch-mode power supplies (SMPS), server power supplies, and uninterruptible power supplies (UPS). Its high withstand voltage of 600V ensures stable operation under high-voltage environments, while low conduction losses help improve conversion efficiency and reduce heat generation.
2. **Photovoltaic inverter**: In solar photovoltaic systems, this MOSFET can be used in efficient DC-AC inverters to ensure that the energy from solar panels is efficiently converted and transmitted to the grid or energy storage system. Its high-voltage characteristics are suitable for handling high-voltage DC in solar systems.
3. **Electric vehicle (EV) charging piles**: The LSB60R170GF-VB is suitable for fast chargers and high-power DC charging piles for electric vehicles. It can handle high-voltage DC and switch quickly, improving charging speed and efficiency while maintaining high reliability of the equipment.
4. **Industrial motor drive**: This MOSFET is suitable for high-voltage motor drive systems in the industrial field, especially variable frequency drives (VFDs) that require high power density. Its high withstand voltage characteristics and high current handling capabilities ensure the efficient operation of industrial equipment.
5. **Lighting driver**: LSB60R170GF-VB can also be used in high-voltage LED lighting drivers, especially in high-power outdoor lighting and industrial lighting equipment. Its efficient current control can provide stable lighting effects and high energy efficiency for these applications.
In short, LSB60R170GF-VB has a wide range of applications in high-voltage power management, photovoltaic inverters, electric vehicle charging piles, industrial motor control and other fields with its high withstand voltage of 600V, low conduction loss and super junction technology.
1. **High-voltage power converter**: The LSB60R170GF-VB is particularly suitable for high-voltage power converters, such as switch-mode power supplies (SMPS), server power supplies, and uninterruptible power supplies (UPS). Its high withstand voltage of 600V ensures stable operation under high-voltage environments, while low conduction losses help improve conversion efficiency and reduce heat generation.
2. **Photovoltaic inverter**: In solar photovoltaic systems, this MOSFET can be used in efficient DC-AC inverters to ensure that the energy from solar panels is efficiently converted and transmitted to the grid or energy storage system. Its high-voltage characteristics are suitable for handling high-voltage DC in solar systems.
3. **Electric vehicle (EV) charging piles**: The LSB60R170GF-VB is suitable for fast chargers and high-power DC charging piles for electric vehicles. It can handle high-voltage DC and switch quickly, improving charging speed and efficiency while maintaining high reliability of the equipment.
4. **Industrial motor drive**: This MOSFET is suitable for high-voltage motor drive systems in the industrial field, especially variable frequency drives (VFDs) that require high power density. Its high withstand voltage characteristics and high current handling capabilities ensure the efficient operation of industrial equipment.
5. **Lighting driver**: LSB60R170GF-VB can also be used in high-voltage LED lighting drivers, especially in high-power outdoor lighting and industrial lighting equipment. Its efficient current control can provide stable lighting effects and high energy efficiency for these applications.
In short, LSB60R170GF-VB has a wide range of applications in high-voltage power management, photovoltaic inverters, electric vehicle charging piles, industrial motor control and other fields with its high withstand voltage of 600V, low conduction loss and super junction technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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