Featured Model

LSB60R092GF-VB Product details

Product introduction:

1. LSB60R092GF-VB Product Introduction
LSB60R092GF-VB is a high-performance single N-channel MOSFET in TO247 package with a high withstand voltage of 600V, suitable for demanding high-voltage applications. When the gate drive voltage is 10V, the device has an on-resistance (RDS(ON)) of 60mΩ and supports a maximum drain current (ID) of 47A. Using SJ_Multi-EPI technology, this MOSFET has excellent switching characteristics and thermal stability, and is widely used in power conversion, inverters and motor drives.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 47A 60mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
II. LSB60R092GF-VB Detailed parameter description
1. **Package type**: TO247
- Large package provides good heat dissipation performance, suitable for high power and high current applications.

2. **Channel type**: Single-N-Channel
- Designed for low-side switches and drive circuits.

3. **Drain-source voltage (VDS)**: 600V
- Up to 600V withstand voltage capability, can meet the needs of high-voltage circuits.

4. **Gate-source voltage (VGS)**: ±30V
- Supports ±30V gate-source voltage, suitable for various drive circuit designs.

5. **Threshold voltage (Vth)**: 3.5V
- Moderate threshold voltage, able to switch quickly at a lower drive voltage.

6. **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- Low on-resistance effectively reduces conduction loss and improves system efficiency.

7. **Drain current (ID)**: 47A
- Able to withstand up to 47A continuous drain current, suitable for various medium power applications.

8. **Technology**: SJ_Multi-EPI
- Adopts multi-layer EPI technology, with efficient current conduction and better switching performance.

Domain and module applications:

3. Application fields and module examples
1. **Power converter**
LSB60R092GF-VB is particularly suitable for high-voltage power converters, such as AC-DC and DC-DC converters. Its high drain-source voltage and low on-resistance can effectively improve conversion efficiency and reduce energy loss, and is widely used in power supply and chargers.

2. **Inverter**
In inverter applications, LSB60R092GF-VB can be used as the main switching element, suitable for solar inverters and uninterruptible power supply (UPS) systems. Its high voltage tolerance ensures the stability and reliability of the inverter under extreme conditions.

3. **Motor drive**
LSB60R092GF-VB is suitable for motor drive modules, especially in high voltage and high current applications. Its excellent conduction characteristics and heat dissipation capabilities can ensure the smooth operation of the motor under load changes, and is widely used in industrial motors and electric vehicles.

4. **Battery Management System**
This MOSFET can also be used in battery management systems as a load switch and power switching to achieve efficient charge and discharge management. Its high voltage handling capability makes the LSB60R092GF-VB an ideal choice for battery pack management and battery protection systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat