LSB55R140GT-VB Product details
Product introduction:
The LSB55R140GT-VB is a high voltage, high performance single N-channel MOSFET in a TO247 package, designed for high voltage and high power applications. With a maximum drain-source voltage (VDS) of 500V and the ability to withstand a drain current (ID) of up to 40A, it is ideal for industrial and consumer electronics. Based on advanced SJ_Multi-EPI technology, the device features excellent conductivity and low on-resistance (RDS(ON)), which significantly reduces energy consumption and improves system efficiency during operation. The LSB55R140GT-VB is ideal for efficient power conversion and current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI (multi-layer epitaxial technology)
Domain and module applications:
1. **Power converter**: LSB55R140GT-VB is widely used in high voltage DC-DC converters and AC-DC power adapters. Due to its high withstand voltage of 500V and low on-resistance, it can effectively reduce power loss and improve conversion efficiency during power conversion, and is suitable for communication equipment and server power management.
2. **Industrial drive system**: In industrial automation and drive systems, LSB55R140GT-VB can be used for equipment such as motor control and inverters. Its high current carrying capacity enables it to perform well under high power loads, ensuring the smooth operation of motors and other loads, improving production efficiency and equipment reliability.
3. **Renewable energy system**: This MOSFET has important applications in solar inverters and wind power generation systems. Its high voltage capability enables it to handle high voltage outputs from solar panels and wind turbines, ensuring the stability and safety of power conversion, thereby promoting the use of renewable energy.
4. **Consumer Electronics**: LSB55R140GT-VB is also suitable for high-end consumer electronics such as large household appliances and high-power audio systems. Its low on-resistance can significantly reduce energy loss, improve the operating efficiency of equipment, and meet users' needs for high performance and low energy consumption.
In short, with its superior performance and wide application potential, LSB55R140GT-VB has become an ideal choice for fields such as high-voltage power management, industrial drives and renewable energy systems, providing support for the realization of high-efficiency and high-reliability electronic devices.
Technical support:
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