LSB20N65-VB Product details
Product introduction:
The LSB20N65-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high voltage applications with a maximum drain-source voltage (VDS) of 650V. The gate drive voltage range of this MOSFET is ±30V and the threshold voltage is 3.5V. At a gate drive voltage of 10V, the on-resistance is 75mΩ, supporting a continuous drain current of up to 47A. The SJ_Multi-EPI technology it uses makes it stable in high temperature and high voltage environments, and is widely used in power management and motor drive and other fields. With its excellent performance and reliability, the LSB20N65-VB has become an ideal choice for modern power supply design and high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| Parameter Name| Value|
|--------------------|--------------------------------|
| Package Type| TO247 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 650V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) | 75mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 47A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
1. **Switching Power Supply (SMPS)**
The LSB20N65-VB can be used in switching power supply designs, especially in applications with high voltage input and output. Due to its high voltage characteristics and low on-resistance, it can significantly improve conversion efficiency and reduce energy loss, and is widely used in power adapters, server power supplies, and industrial power modules.
2. **Motor Drive**
In motor control applications, the LSB20N65-VB is an ideal choice for use as a switching element in motor drive circuits. It can effectively manage the start-up and operation of high-power motors and is widely used in motor control systems for power tools, electric vehicles, and industrial equipment.
3. **Battery Management System**
This MOSFET is also suitable for use in battery management systems (BMS), especially in high-voltage lithium battery packs. The LSB20N65-VB can provide efficient switching control to ensure the stability and safety of the battery during charging and discharging, thereby improving battery life.
4. **Photovoltaic Inverter**
LSB20N65-VB is suitable for photovoltaic inverter design, which can effectively convert and manage the high voltage output in solar power generation systems. Its high voltage tolerance and low conduction loss make it an important component in photovoltaic applications, ensuring that the inverter operates under efficient and reliable conditions.
Through the above application examples, LSB20N65-VB shows its wide applicability in the field of high-voltage power management and control, and is an indispensable and important component in modern power systems.
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