LSB20N65F-VB Product details
Product introduction:
LSB20N65F-VB is a single N-channel MOSFET in TO247 package, designed for high-voltage applications. The device has a drain-source withstand voltage (VDS) of up to 650V and a gate-source withstand voltage (VGS) of ±30V, and can withstand a continuous drain current (ID) of up to 20A. Its on-resistance (RDS(ON)) is 160mΩ at VGS=10V, which is suitable for applications with high power loss requirements. LSB20N65F-VB adopts SJ_Multi-EPI technology, has excellent switching performance and thermal stability, and can meet the needs of a variety of high-efficiency power supplies and drive circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
1. **Package**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source withstand voltage (VDS)**: 650V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 20A
8. **Technology**: SJ_Multi-EPI
9. **Maximum power dissipation**: Depends on the specific design and heat dissipation conditions
10. **Operating temperature range**: Typically -55°C to 175°C
Domain and module applications:
1. **High-voltage power supply**: LSB20N65F-VB can be widely used in high-voltage power supply modules, especially in converters that require high voltage resistance and low power consumption, such as UPS (uninterruptible power supply) and power adapters, to improve the energy efficiency of the power supply through its low on-resistance.
2. **Industrial drive**: In industrial motor control, this MOSFET can efficiently control the start and operation of high-voltage motors, and is suitable for driving pumps, fans and other high-power equipment to ensure their efficient and stable operation.
3. **Switch mode power supply (SMPS)**: LSB20N65F-VB is suitable for various switch mode power supplies, which can achieve efficient energy conversion, especially in applications requiring high voltage and high current, such as communication base stations and server power supplies.
4. **Renewable energy system**: In solar inverters and wind power generation systems, this MOSFET can be used as an efficient switching device to achieve better power conversion efficiency and help improve the utilization of renewable energy.
5. **LED driver**: LSB20N65F-VB is also suitable for LED driver circuits. Through stable current supply, it ensures high brightness and long life of LED lighting systems, and is suitable for smart lighting and high-power lighting applications.
Technical support:
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