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LSB20N60F-VB Product details
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LSB20N60F-VB Product Introduction
LSB20N60F-VB is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage switching and power management applications. Its drain-source voltage (VDS) is up to 600V, suitable for demanding power systems, and can provide stable performance under high voltage conditions. The gate-source voltage (VGS) of this MOSFET supports ±30V, and the gate threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 160mΩ at a gate voltage of 10V, which makes it perform well under high current conditions, and the maximum drain current (ID) can reach 20A. LSB20N60F-VB uses SJ_Multi-EPI (multi-layer epitaxy) technology, which not only improves the voltage resistance of the device, but also optimizes the conductivity and switching efficiency, making it perform well in various applications.
LSB20N60F-VB is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage switching and power management applications. Its drain-source voltage (VDS) is up to 600V, suitable for demanding power systems, and can provide stable performance under high voltage conditions. The gate-source voltage (VGS) of this MOSFET supports ±30V, and the gate threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 160mΩ at a gate voltage of 10V, which makes it perform well under high current conditions, and the maximum drain current (ID) can reach 20A. LSB20N60F-VB uses SJ_Multi-EPI (multi-layer epitaxy) technology, which not only improves the voltage resistance of the device, but also optimizes the conductivity and switching efficiency, making it perform well in various applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description of LSB20N60F-VB
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: SJ_Multi-EPI (multi-layer epitaxial technology)
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 600V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: SJ_Multi-EPI (multi-layer epitaxial technology)
Domain and module applications：
Application fields and module examples
1. **Switching Power Supply (SMPS)**: The LSB20N60F-VB is widely used in switching power supply (SMPS) designs due to its high withstand voltage characteristics. In these applications, the MOSFET can be used as a switching element to support efficient power conversion and stable output voltage, thereby improving the energy efficiency and reliability of the entire power system.
2. **Power Tools and Home Appliances**: In power tools and various home appliances, the LSB20N60F-VB can be used as a power control element to help achieve efficient power management. These devices usually require high withstand voltage and high current support, and the LSB20N60F-VB can provide excellent performance under harsh conditions.
3. **Industrial Control Systems**: In industrial automation and control systems, the LSB20N60F-VB is used for motor drive and power distribution. The high voltage and high current handling capabilities of this MOSFET make it an ideal choice for various industrial equipment (such as servo motors and inverters), ensuring stability and safety under various working conditions.
4. **Photovoltaic Inverter**: LSB20N60F-VB is suitable for inverter design in photovoltaic systems. It can well meet the conversion needs between solar panels and power grids under the requirements of high voltage and high efficiency, and improve the efficiency of energy utilization.
Through examples of these application areas, LSB20N60F-VB demonstrates its wide applicability and excellent performance in high-voltage power management and switch control, meeting the high requirements of modern power electronic equipment for power processing and switching efficiency.
1. **Switching Power Supply (SMPS)**: The LSB20N60F-VB is widely used in switching power supply (SMPS) designs due to its high withstand voltage characteristics. In these applications, the MOSFET can be used as a switching element to support efficient power conversion and stable output voltage, thereby improving the energy efficiency and reliability of the entire power system.
2. **Power Tools and Home Appliances**: In power tools and various home appliances, the LSB20N60F-VB can be used as a power control element to help achieve efficient power management. These devices usually require high withstand voltage and high current support, and the LSB20N60F-VB can provide excellent performance under harsh conditions.
3. **Industrial Control Systems**: In industrial automation and control systems, the LSB20N60F-VB is used for motor drive and power distribution. The high voltage and high current handling capabilities of this MOSFET make it an ideal choice for various industrial equipment (such as servo motors and inverters), ensuring stability and safety under various working conditions.
4. **Photovoltaic Inverter**: LSB20N60F-VB is suitable for inverter design in photovoltaic systems. It can well meet the conversion needs between solar panels and power grids under the requirements of high voltage and high efficiency, and improve the efficiency of energy utilization.
Through examples of these application areas, LSB20N60F-VB demonstrates its wide applicability and excellent performance in high-voltage power management and switch control, meeting the high requirements of modern power electronic equipment for power processing and switching efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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