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LSB11N65E-VB Product details
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1. LSB11N65E-VB Product Introduction
LSB11N65E-VB is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage applications. Its drain-source withstand voltage (VDS) is 650V, suitable for various medium and high voltage power management and switching applications. The threshold voltage (Vth) of the device is 3.5V, which enables switching operation at a lower gate voltage. The on-resistance (RDS(ON)) of LSB11N65E-VB is 420mΩ@VGS=10V, and the maximum drain current can reach 11A, which enables it to maintain good efficiency and stability in high voltage environments, and is very suitable for applications with high voltage and high reliability requirements.
LSB11N65E-VB is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage applications. Its drain-source withstand voltage (VDS) is 650V, suitable for various medium and high voltage power management and switching applications. The threshold voltage (Vth) of the device is 3.5V, which enables switching operation at a lower gate voltage. The on-resistance (RDS(ON)) of LSB11N65E-VB is 420mΩ@VGS=10V, and the maximum drain current can reach 11A, which enables it to maintain good efficiency and stability in high voltage environments, and is very suitable for applications with high voltage and high reliability requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 11A | 420mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. LSB11N65E-VB Detailed parameter description
- **Package type**: TO247
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 420mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO247
- **Polarity configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 420mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
III. Applicable fields and application modules
1. **Power converter**
The LSB11N65E-VB is very suitable for high-voltage DC-DC converters, especially in industrial power supplies and power electronic equipment. Its high withstand voltage characteristics and relatively low on-resistance enable it to efficiently convert voltages while ensuring energy efficiency and reducing energy losses.
2. **Electric vehicles and hybrid vehicles**
In the electric drive systems of electric vehicles and hybrid vehicles, the LSB11N65E-VB can be used as a motor drive switch or power management switch, capable of withstanding high voltage currents and ensuring safe and reliable operation. In addition, the high withstand voltage characteristics of this MOSFET make it suitable for automotive battery management and charging systems.
3. **Industrial automation equipment**
The device can be used in various high-voltage switch applications in the field of industrial automation, such as motor control, drive, and power regulation. The high current carrying capacity and stability of the LSB11N65E-VB can meet the needs of automation equipment for high efficiency and reliability.
4. **Lighting equipment and LED drivers**
In LED drivers and lighting control systems, LSB11N65E-VB can effectively control high-voltage LED light sources and improve the energy efficiency of lighting systems. Its high-voltage resistance makes it excellent in lighting solutions that require high-voltage drive, and is particularly suitable for street lighting, industrial lighting, and outdoor lighting systems.
1. **Power converter**
The LSB11N65E-VB is very suitable for high-voltage DC-DC converters, especially in industrial power supplies and power electronic equipment. Its high withstand voltage characteristics and relatively low on-resistance enable it to efficiently convert voltages while ensuring energy efficiency and reducing energy losses.
2. **Electric vehicles and hybrid vehicles**
In the electric drive systems of electric vehicles and hybrid vehicles, the LSB11N65E-VB can be used as a motor drive switch or power management switch, capable of withstanding high voltage currents and ensuring safe and reliable operation. In addition, the high withstand voltage characteristics of this MOSFET make it suitable for automotive battery management and charging systems.
3. **Industrial automation equipment**
The device can be used in various high-voltage switch applications in the field of industrial automation, such as motor control, drive, and power regulation. The high current carrying capacity and stability of the LSB11N65E-VB can meet the needs of automation equipment for high efficiency and reliability.
4. **Lighting equipment and LED drivers**
In LED drivers and lighting control systems, LSB11N65E-VB can effectively control high-voltage LED light sources and improve the energy efficiency of lighting systems. Its high-voltage resistance makes it excellent in lighting solutions that require high-voltage drive, and is particularly suitable for street lighting, industrial lighting, and outdoor lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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