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LR8711C-VB Product details
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LR8711C-VB Product Introduction
LR8711C-VB is a single N-channel MOSFET in TO252 package with high performance characteristics, designed for high-efficiency power management and switching applications. This MOSFET supports drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V. With its 1.7V gate threshold voltage (Vth) and extremely low on-resistance (RDS(ON)), it is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V. The maximum continuous drain current can reach 100A, greatly improving the power conversion efficiency of the system. Based on Trench technology, this product can provide excellent conduction characteristics and low switching losses, suitable for a variety of high current applications.
LR8711C-VB is a single N-channel MOSFET in TO252 package with high performance characteristics, designed for high-efficiency power management and switching applications. This MOSFET supports drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V. With its 1.7V gate threshold voltage (Vth) and extremely low on-resistance (RDS(ON)), it is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V. The maximum continuous drain current can reach 100A, greatly improving the power conversion efficiency of the system. Based on Trench technology, this product can provide excellent conduction characteristics and low switching losses, suitable for a variety of high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of LR8711C-VB
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Automotive electronics**: Due to its high current handling capability and low conduction losses, the LR8711C-VB is ideally suited for power management modules in automotive electrical systems, such as motor drives, battery management systems, and DC-DC converters. These applications require low resistance, reliable switching characteristics to provide higher energy efficiency and durability.
2. **Consumer electronics**: This MOSFET can be used for high-efficiency portable device power management, such as power conditioning modules in laptops, tablets, and smartphones. Its low on-resistance reduces heat dissipation, improves energy efficiency, and thus extends device battery life.
3. **Industrial power conversion**: The high power handling capability and fast switching characteristics of the LR8711C-VB are ideal for switching power supplies and motor control systems in industrial equipment. The device can be used in scenarios such as industrial motor drives, power factor correction circuits (PFC), and uninterruptible power supplies (UPS).
4. **Data Center and Communication Equipment**: Servers and communication infrastructure in data centers require efficient power management solutions. The low switching loss and high efficiency of the LR8711C-VB make it an ideal choice in these high-performance systems, helping to reduce power consumption and system operating costs.
1. **Automotive electronics**: Due to its high current handling capability and low conduction losses, the LR8711C-VB is ideally suited for power management modules in automotive electrical systems, such as motor drives, battery management systems, and DC-DC converters. These applications require low resistance, reliable switching characteristics to provide higher energy efficiency and durability.
2. **Consumer electronics**: This MOSFET can be used for high-efficiency portable device power management, such as power conditioning modules in laptops, tablets, and smartphones. Its low on-resistance reduces heat dissipation, improves energy efficiency, and thus extends device battery life.
3. **Industrial power conversion**: The high power handling capability and fast switching characteristics of the LR8711C-VB are ideal for switching power supplies and motor control systems in industrial equipment. The device can be used in scenarios such as industrial motor drives, power factor correction circuits (PFC), and uninterruptible power supplies (UPS).
4. **Data Center and Communication Equipment**: Servers and communication infrastructure in data centers require efficient power management solutions. The low switching loss and high efficiency of the LR8711C-VB make it an ideal choice in these high-performance systems, helping to reduce power consumption and system operating costs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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