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LR8113-VB Product details
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Product Introduction:
LR8113-VB is a high-efficiency single N-channel MOSFET that uses advanced trench technology and is packaged in a TO252 package. The device has a maximum drain-source voltage (VDS) of 30V, which is suitable for low-voltage applications. It also has a gate-source voltage (VGS) of ±20V, supporting a wide range of drive voltage operations. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 3mΩ at a gate-source voltage of 4.5V, which is further reduced to 2mΩ at 10V, and can carry a drain current (ID) of up to 100A. With its low conduction loss and high current handling capability, this product is widely used in the fields of efficient power management and high load current control.
LR8113-VB is a high-efficiency single N-channel MOSFET that uses advanced trench technology and is packaged in a TO252 package. The device has a maximum drain-source voltage (VDS) of 30V, which is suitable for low-voltage applications. It also has a gate-source voltage (VGS) of ±20V, supporting a wide range of drive voltage operations. Its turn-on voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 3mΩ at a gate-source voltage of 4.5V, which is further reduced to 2mΩ at 10V, and can carry a drain current (ID) of up to 100A. With its low conduction loss and high current handling capability, this product is widely used in the fields of efficient power management and high load current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of the LR8113-VB make it ideal for DC-DC power converters, which can improve power efficiency, reduce power consumption, and extend the battery life of devices in consumer electronics and communication equipment.
2. **Automotive power management**: Due to its high current carrying capacity, the LR8113-VB is very suitable for battery management and drive systems in electric vehicles, which can effectively manage the battery charging and discharging process and drive efficient motors.
3. **LED drive circuit**: This MOSFET is suitable for high-power LED driving, and can provide high current output while maintaining low on-resistance, ensuring that lighting equipment has stable brightness and high efficiency under different conditions.
4. **Industrial power modules**: In power modules in the industrial field, the LR8113-VB can be used as a switching device to provide stable power output in high-load applications, improve the energy efficiency of the overall system, and reduce heat loss.
5. **Consumer electronics**: The device is also suitable for use as a power switch in consumer electronics products such as smart home appliances and handheld devices to ensure efficient power management, thereby improving product operating efficiency and user experience.
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of the LR8113-VB make it ideal for DC-DC power converters, which can improve power efficiency, reduce power consumption, and extend the battery life of devices in consumer electronics and communication equipment.
2. **Automotive power management**: Due to its high current carrying capacity, the LR8113-VB is very suitable for battery management and drive systems in electric vehicles, which can effectively manage the battery charging and discharging process and drive efficient motors.
3. **LED drive circuit**: This MOSFET is suitable for high-power LED driving, and can provide high current output while maintaining low on-resistance, ensuring that lighting equipment has stable brightness and high efficiency under different conditions.
4. **Industrial power modules**: In power modules in the industrial field, the LR8113-VB can be used as a switching device to provide stable power output in high-load applications, improve the energy efficiency of the overall system, and reduce heat loss.
5. **Consumer electronics**: The device is also suitable for use as a power switch in consumer electronics products such as smart home appliances and handheld devices to ensure efficient power management, thereby improving product operating efficiency and user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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