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LR3636-VB Product details

Product introduction:

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LR3636-VB is a high-efficiency single N-channel power MOSFET in TO252 package, designed for high-performance power management and switching applications. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) range of ±20V, and a turn-on threshold voltage (Vth) of 3V. At VGS of 4.5V, the on-resistance (RDS(ON)) is 12mΩ, while at VGS of 10V, RDS(ON) is lower, reaching 4.5mΩ, and the maximum drain current (ID) can reach 97A. The device uses advanced trench technology to provide excellent current carrying capacity and thermal performance, and is suitable for a variety of electronic devices that require high performance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 3V 97A 4.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 3V 97A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
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1. **Package type**: TO252
2. **Device configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Turning point voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 12mΩ (at VGS=4.5V)
- 4.5mΩ (at VGS=10V)
7. **Maximum drain current (ID)**: 97A
8. **Technology type**: Trench technology
9. **Thermal resistance**: Based on the thermal characteristics parameters provided in the product documentation
10. **Switching speed**: Suitable for high-frequency switching, the specific parameters depend on the application circuit design
11. **Operating temperature range**: Typically -55°C to 150°C, please refer to the product specification for details

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Domain and module applications:

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LR3636-VB MOSFET performs well in multiple high-efficiency power management and switching applications. Common application areas include:

1. **Power Management System**: This MOSFET is widely used in switching power supplies (SMPS), especially in high-efficiency power converters, which can effectively reduce power consumption and improve system efficiency. It is suitable for computer power supplies and industrial power modules.
2. **Electric Vehicle**: In the power management and drive systems of electric vehicles (EVs) and hybrid vehicles, LR3636-VB can be used to control the charging and discharging process of the battery to achieve efficient power management and safety protection.
3. **LED Drive Circuit**: This device can be used in the drive circuit of LED lighting systems to achieve efficient current control through low on-resistance, improving the energy efficiency and service life of LED lamps.
4. **Motor Control**: LR3636-VB is suitable for various motor drive applications, including brushless DC motors (BLDC) and stepper motors, and can provide stable current control and high-efficiency drive capabilities.
5. **Consumer Electronics**: In high-performance consumer electronic devices (such as high-power mobile devices and home appliances), this MOSFET can be used as a power switch to improve the power conversion efficiency and stability of the system.

With its excellent performance and diverse application range, the LR3636-VB MOSFET is an ideal choice in modern electronic device design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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