LR3411-VB Product details
Product introduction:
LR3411-VB is a high-efficiency single N-channel MOSFET that uses advanced trench technology and is designed for medium power and high voltage applications. The device has a drain-source voltage (VDS) of 100V and is suitable for a variety of power electronics applications. Its gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 114mΩ@VGS=10V, and the maximum drain current (ID) is 15A. LR3411-VB uses TO252 package, has good heat dissipation performance, and is widely used in switching power supplies, DC-DC converters, motor drives and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package Type**: TO252
- This package is designed to provide excellent heat dissipation performance and is suitable for compact circuit board design.
2. **Channel Type**: Single-N-Channel
- Provides efficient current control and is suitable for various switching and amplification applications.
3. **Drain-Source Voltage (VDS)**: 100V
- Able to withstand voltages up to 100V, suitable for power electronics applications in high voltage environments.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage to ensure the stability of the MOSFET under various operating conditions.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, suitable for low voltage drive circuits.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- Low on-resistance helps reduce power consumption and improve overall system efficiency, especially in high-frequency switching applications.
7. **Drain current (ID)**: 15A
- Maximum continuous drain current is 15A, suitable for medium power loads.
8. **Technology**: Trench
- The trench technology used improves current handling capability and reduces on-resistance, helping to optimize switching performance and efficiency.
Domain and module applications:
1. **Switching mode power supply (SMPS)**
LR3411-VB is widely used in switching mode power supplies (SMPS). Due to its low on-resistance and high current handling capability, the device can significantly improve the conversion efficiency of the power supply, suitable for high power density design, and meet the market demand for high-efficiency power supply.
2. **DC-DC converter**
LR3411-VB can be used as an efficient switching element in a variety of DC-DC converters. It can handle input voltages up to 100V, suitable for battery-powered devices and other power management modules, ensuring stable output voltage and current.
3. **Motor drive**
LR3411-VB is suitable for a variety of motor control and drive applications, especially medium-power DC motors and stepper motors. Its maximum current capability is 15A, enabling it to meet high load requirements during motor startup and operation.
4. **Load switch and protection circuit**
This MOSFET can also be used as a load switch, providing efficient power switching under overload conditions. Its low on-resistance characteristics improve the performance of the protection circuit, ensuring that the system can cut off the power supply in time under overcurrent or short-circuit conditions to ensure safety and reliability.
Technical support:
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