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LR3114Z-VB Product details

Product introduction:

LR3114Z-VB MOSFET Product Introduction

The LR3114Z-VB is a high-performance unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO252, designed for high current and low power applications. Its drain-source voltage is 40V and the gate-source voltage range is ±20V, which is suitable for a variety of power management and conversion applications. The device has a turn-on threshold voltage of 2.5V, which enables it to turn on quickly at a lower voltage, thereby achieving efficient switching performance. The on-resistance (RDS(ON)) of the LR3114Z-VB is 6mΩ at a gate voltage of 4.5V, and is even lower at 5mΩ at 10V. This low on-resistance characteristic makes it excel in high current applications, helping to significantly reduce energy losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
LR3114Z-VB Detailed parameter description

- **Package type**: TO252
- **Polarity configuration**: Single N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Application temperature range**: Adapt to a wide range of working environments and have good thermal stability.

Domain and module applications:

Application areas and modules of LR3114Z-VB

1. **Power management system**: Due to its low on-resistance and high current carrying capacity, LR3114Z-VB is ideal for switch mode power supplies (SMPS), DC-DC converters and other power management modules. These applications require high-efficiency and low-power devices to reduce the system's thermal losses and improve overall efficiency.

2. **Motor drive**: In motor control systems, such as brushless DC motors (BLDC) and servo motors, the high current capability and low on-resistance of LR3114Z-VB make it ideal for motor drive circuits. This feature ensures reliable operation under high load conditions.

3. **Automotive electronics**: LR3114Z-VB is suitable for use in automotive electronic systems, such as battery management systems (BMS) and charging modules for electric vehicles. Its high voltage resistance and low power consumption can improve the overall efficiency and safety of electric and hybrid vehicles.

4. **Consumer Electronics**: In power modules of consumer electronic devices such as laptops and mobile phones, this MOSFET can be used in chargers and power distribution circuits. Its high efficiency and low heat characteristics enable it to play an important role in miniaturized designs.

With its superior performance and flexible application scenarios, LR3114Z-VB has become an indispensable device in efficient power solutions and is widely used in various power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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