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LR3103-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
LR3103-VB is a high-efficiency **N-channel power MOSFET** in **TO252 package**, designed for high current and high switching frequency applications. Its maximum drain-source voltage (VDS) is **30V**, and supports gate-source voltage (VGS) up to **±20V**. LR3103-VB has a **1.7V gate threshold voltage (Vth)**, which enables fast turn-on at a lower gate drive voltage. Its on-resistance is **6mΩ@VGS=4.5V** and **5mΩ@VGS=10V**, ensuring low energy loss during power transmission at a drain current (ID) of up to **80A**. This MOSFET uses **Trench technology** and has excellent conductivity, making it suitable for various power management and switching circuits.
LR3103-VB is a high-efficiency **N-channel power MOSFET** in **TO252 package**, designed for high current and high switching frequency applications. Its maximum drain-source voltage (VDS) is **30V**, and supports gate-source voltage (VGS) up to **±20V**. LR3103-VB has a **1.7V gate threshold voltage (Vth)**, which enables fast turn-on at a lower gate drive voltage. Its on-resistance is **6mΩ@VGS=4.5V** and **5mΩ@VGS=10V**, ensuring low energy loss during power transmission at a drain current (ID) of up to **80A**. This MOSFET uses **Trench technology** and has excellent conductivity, making it suitable for various power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Maximum power consumption (Ptot)**: Depends on thermal design and application scenarios (thermal management under TO252 package)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Maximum power consumption (Ptot)**: Depends on thermal design and application scenarios (thermal management under TO252 package)
Domain and module applications：
3. Application fields and module examples:
LR3103-VB MOSFET is widely used in a variety of **power electronics fields**, especially in situations where high current and high efficiency are required. For example:
- **Power management system**: This MOSFET is suitable for switching power supplies (SMPS) and DC-DC converters, and can efficiently handle power conversion and reduce energy losses, thereby improving the overall efficiency of the system, especially in situations where high current output is required.
- **Motor drive**: In motor control applications, such as BLDC motor and stepper motor drive, the high current capability and low on-resistance of LR3103-VB enable it to achieve efficient motor drive and ensure stable startup and operation.
- **Inverter**: LR3103-VB is suitable for use as a switching element of the inverter in photovoltaic and wind power generation systems, which can efficiently convert DC to AC and maintain stable output power.
- **Automotive Electronics**: In automotive electrical systems, this MOSFET can be used in battery management and power distribution modules to handle high current demands, improve energy efficiency, and ensure system safety and stability.
With these features, the LR3103-VB provides excellent performance and reliability in applications that require high efficiency, low power consumption, and high current.
LR3103-VB MOSFET is widely used in a variety of **power electronics fields**, especially in situations where high current and high efficiency are required. For example:
- **Power management system**: This MOSFET is suitable for switching power supplies (SMPS) and DC-DC converters, and can efficiently handle power conversion and reduce energy losses, thereby improving the overall efficiency of the system, especially in situations where high current output is required.
- **Motor drive**: In motor control applications, such as BLDC motor and stepper motor drive, the high current capability and low on-resistance of LR3103-VB enable it to achieve efficient motor drive and ensure stable startup and operation.
- **Inverter**: LR3103-VB is suitable for use as a switching element of the inverter in photovoltaic and wind power generation systems, which can efficiently convert DC to AC and maintain stable output power.
- **Automotive Electronics**: In automotive electrical systems, this MOSFET can be used in battery management and power distribution modules to handle high current demands, improve energy efficiency, and ensure system safety and stability.
With these features, the LR3103-VB provides excellent performance and reliability in applications that require high efficiency, low power consumption, and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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