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LR230ATM-VB Product details
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1. LR230ATM-VB Product Introduction
LR230ATM-VB is a single N-channel MOSFET designed with advanced trench technology to meet the needs of high voltage and medium power applications. The device has a maximum drain-source voltage (VDS) of 200V and can withstand voltages up to 200V, making it suitable for power electronics applications. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, on-resistance (RDS(ON)) is 245mΩ@VGS=10V, and maximum drain current (ID) is 10A. The TO252 package of LR230ATM-VB is small and has good heat dissipation performance, making it very suitable for compact circuit design and widely used in switching power supplies, DC-DC converters, motor control and other fields.
LR230ATM-VB is a single N-channel MOSFET designed with advanced trench technology to meet the needs of high voltage and medium power applications. The device has a maximum drain-source voltage (VDS) of 200V and can withstand voltages up to 200V, making it suitable for power electronics applications. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, on-resistance (RDS(ON)) is 245mΩ@VGS=10V, and maximum drain current (ID) is 10A. The TO252 package of LR230ATM-VB is small and has good heat dissipation performance, making it very suitable for compact circuit design and widely used in switching power supplies, DC-DC converters, motor control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. LR230ATM-VB Parameter Description
1. **Package Type**: TO252
- Provides good heat dissipation performance and is suitable for a variety of circuit board designs, which can effectively reduce the operating temperature.
2. **Channel Type**: Single-N-Channel
- Suitable for efficient current control and switching applications.
3. **Drain-Source Voltage (VDS)**: 200V
- Able to handle a maximum voltage of 200V, suitable for high-voltage power electronics applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage to ensure stable operation and efficient switching of the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, suitable for medium and low voltage drive circuits.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- Lower on-resistance helps reduce power consumption and improve system efficiency, suitable for high-frequency switching applications.
7. **Drain current (ID)**: 10A
- Maximum continuous drain current is 10A, suitable for medium power applications.
8. **Technology**: Trench
- Using advanced trench technology, it provides better current handling capability and lower on-resistance, optimizing switching performance.
1. **Package Type**: TO252
- Provides good heat dissipation performance and is suitable for a variety of circuit board designs, which can effectively reduce the operating temperature.
2. **Channel Type**: Single-N-Channel
- Suitable for efficient current control and switching applications.
3. **Drain-Source Voltage (VDS)**: 200V
- Able to handle a maximum voltage of 200V, suitable for high-voltage power electronics applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage to ensure stable operation and efficient switching of the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, suitable for medium and low voltage drive circuits.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- Lower on-resistance helps reduce power consumption and improve system efficiency, suitable for high-frequency switching applications.
7. **Drain current (ID)**: 10A
- Maximum continuous drain current is 10A, suitable for medium power applications.
8. **Technology**: Trench
- Using advanced trench technology, it provides better current handling capability and lower on-resistance, optimizing switching performance.
Domain and module applications：
3. Application fields and module examples
1. **Switching mode power supply (SMPS)**
LR230ATM-VB is widely used in switching mode power supplies (SMPS), especially in situations where high efficiency and high power density are required. Its low on-resistance can effectively reduce power consumption and enhance conversion efficiency, ensuring stable operation of the equipment under high load conditions.
2. **DC-DC converter**
Among various DC-DC converters, LR230ATM-VB can be used as a switching element to handle input voltages up to 200V, suitable for battery management systems and power modules, providing efficient power conversion and output stability.
3. **Motor drive**
LR230ATM-VB is suitable for motor control and drive applications, especially for the control of medium-power DC motors and stepper motors. Its maximum current capacity is 10A, which can meet the needs of efficient drive.
4. **Load Switch and Protection Circuit**
This MOSFET can also be used in load switch applications to provide efficient power switching in load management. Its low on-resistance characteristics can be used to improve the performance of the protection circuit to ensure the safety and reliability of the protection system in overcurrent or short-circuit conditions.
1. **Switching mode power supply (SMPS)**
LR230ATM-VB is widely used in switching mode power supplies (SMPS), especially in situations where high efficiency and high power density are required. Its low on-resistance can effectively reduce power consumption and enhance conversion efficiency, ensuring stable operation of the equipment under high load conditions.
2. **DC-DC converter**
Among various DC-DC converters, LR230ATM-VB can be used as a switching element to handle input voltages up to 200V, suitable for battery management systems and power modules, providing efficient power conversion and output stability.
3. **Motor drive**
LR230ATM-VB is suitable for motor control and drive applications, especially for the control of medium-power DC motors and stepper motors. Its maximum current capacity is 10A, which can meet the needs of efficient drive.
4. **Load Switch and Protection Circuit**
This MOSFET can also be used in load switch applications to provide efficient power switching in load management. Its low on-resistance characteristics can be used to improve the performance of the protection circuit to ensure the safety and reliability of the protection system in overcurrent or short-circuit conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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