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LR110-VB Product details
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1. LR110-VB Product Introduction
LR110-VB is a single N-channel MOSFET designed with advanced trench technology to meet the needs of high-efficiency power conversion and switching applications. Its drain-source voltage (VDS) is as high as 100V, capable of handling higher voltage applications. The device has a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 114mΩ@VGS=10V, and a maximum drain current (ID) of 15A. The TO252 package of LR110-VB is small and has good heat dissipation performance, making it ideal for space-constrained designs and is widely used in power management, switching power supplies, and motor drives.
LR110-VB is a single N-channel MOSFET designed with advanced trench technology to meet the needs of high-efficiency power conversion and switching applications. Its drain-source voltage (VDS) is as high as 100V, capable of handling higher voltage applications. The device has a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 1.8V, an on-resistance (RDS(ON)) of 114mΩ@VGS=10V, and a maximum drain current (ID) of 15A. The TO252 package of LR110-VB is small and has good heat dissipation performance, making it ideal for space-constrained designs and is widely used in power management, switching power supplies, and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. LR110-VB Parameter Description
1. **Package Type**: TO252
- Provides good heat dissipation performance and miniaturized design, suitable for a variety of circuit boards.
2. **Channel Type**: Single-N-Channel
- Provides support for efficient current control and switching applications.
3. **Drain-Source Voltage (VDS)**: 100V
- Suitable for high voltage applications, capable of handling a maximum voltage of 100V.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage to ensure stable operation of the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, suitable for low voltage drive circuits.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- Lower on-resistance helps reduce energy loss and improve system efficiency.
7. **Drain current (ID)**: 15A
- Maximum continuous drain current is 15A, suitable for medium power applications.
8. **Technology**: Trench
- Uses advanced trench technology to provide better current handling capability and low on-resistance.
1. **Package Type**: TO252
- Provides good heat dissipation performance and miniaturized design, suitable for a variety of circuit boards.
2. **Channel Type**: Single-N-Channel
- Provides support for efficient current control and switching applications.
3. **Drain-Source Voltage (VDS)**: 100V
- Suitable for high voltage applications, capable of handling a maximum voltage of 100V.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage to ensure stable operation of the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, suitable for low voltage drive circuits.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- Lower on-resistance helps reduce energy loss and improve system efficiency.
7. **Drain current (ID)**: 15A
- Maximum continuous drain current is 15A, suitable for medium power applications.
8. **Technology**: Trench
- Uses advanced trench technology to provide better current handling capability and low on-resistance.
Domain and module applications：
3. Application fields and module examples
1. **Switching mode power supply (SMPS)**
LR110-VB is widely used in switching mode power supplies (SMPS), especially for designs requiring high efficiency and high power density. Its low on-resistance can reduce power consumption, enhance conversion efficiency, and ensure long-term stable operation.
2. **DC-DC converter**
Among various DC-DC converters, LR110-VB can be used as an efficient switching element, capable of handling input voltages up to 100V, and is very suitable for battery-powered devices and power management modules to provide stable output voltage and current.
3. **Motor drive**
LR110-VB can also be used in motor drive applications, especially in motor control and drive circuits. The rated current of 15A enables it to meet the requirements of medium-power motors and is suitable for the control of DC motors and stepper motors.
4. **Load switch and protection circuit**
This MOSFET can be used as a load switch, which can provide efficient power management for the load. At the same time, the low on-resistance characteristic of LR110-VB enables it to perform excellently in overcurrent protection and short-circuit protection circuits, ensuring the safety and reliability of the system.
1. **Switching mode power supply (SMPS)**
LR110-VB is widely used in switching mode power supplies (SMPS), especially for designs requiring high efficiency and high power density. Its low on-resistance can reduce power consumption, enhance conversion efficiency, and ensure long-term stable operation.
2. **DC-DC converter**
Among various DC-DC converters, LR110-VB can be used as an efficient switching element, capable of handling input voltages up to 100V, and is very suitable for battery-powered devices and power management modules to provide stable output voltage and current.
3. **Motor drive**
LR110-VB can also be used in motor drive applications, especially in motor control and drive circuits. The rated current of 15A enables it to meet the requirements of medium-power motors and is suitable for the control of DC motors and stepper motors.
4. **Load switch and protection circuit**
This MOSFET can be used as a load switch, which can provide efficient power management for the load. At the same time, the low on-resistance characteristic of LR110-VB enables it to perform excellently in overcurrent protection and short-circuit protection circuits, ensuring the safety and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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