LR110ATM-VB Product details
Product introduction:
LR110ATM-VB is a high-performance single N-channel MOSFET that uses advanced trench technology and is packaged in a TO252 package. This MOSFET has a high maximum drain-source voltage (VDS) of 100V and is suitable for applications requiring higher voltages. Its gate-source voltage (VGS) range is ±20V and its turn-on voltage (Vth) is 1.8V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 114mΩ and supports a maximum drain current (ID) of 15A. This makes the LR110ATM-VB an excellent performer in high-efficiency switching applications and is suitable for a variety of electronic devices and systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications:
1. **Switching Power Supply (SMPS)**: The high voltage and low on-resistance of LR110ATM-VB make it excellent in switching power supply modules, which can effectively improve power conversion efficiency and reduce energy loss. It is widely used in consumer electronics and industrial power systems.
2. **LED Drive Circuit**: The performance characteristics of this MOSFET make it very suitable for LED drive circuits. It can stably drive high-power LEDs and achieve efficient lighting solutions. It is especially widely used in outdoor and commercial lighting.
3. **Battery Management System (BMS)**: In battery management applications, LR110ATM-VB can effectively control current during charging and discharging to ensure battery safety and efficiency. It is an indispensable component in electric vehicles and energy storage systems.
4. **Motor Control**: This device is suitable for various motor control applications, including brushless DC motor (BLDC) drives. It can provide high efficiency in controlling current and voltage to ensure the reliability and stability of the motor.
5. **Power switch**: LR110ATM-VB can be used as a high-power load switch, suitable for switching applications in various electronic equipment and systems. It can withstand a current of 15A and provide safe and reliable switching control for the system.
Technical support:
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