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LR110ATF-VB Product details
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LR110ATF-VB MOSFET Product Introduction
The LR110ATF-VB is a high-performance single N-channel MOSFET in a TO252 package designed for medium voltage and current applications. With a drain-source voltage (VDS) up to 100V, the device is suitable for a wide range of power management and switching circuit applications. Its gate drive voltage range is ±20V, enabling stable operation in a variety of operating environments. With a threshold voltage (Vth) of 1.8V, the LR110ATF-VB has a relatively low on-resistance (RDS(ON) = 114mΩ @ VGS = 10V), enabling high efficiency and low power consumption in switching applications. With its trench technology, the LR110ATF-VB provides excellent performance in efficient energy transfer and is suitable for a variety of power electronics applications.
The LR110ATF-VB is a high-performance single N-channel MOSFET in a TO252 package designed for medium voltage and current applications. With a drain-source voltage (VDS) up to 100V, the device is suitable for a wide range of power management and switching circuit applications. Its gate drive voltage range is ±20V, enabling stable operation in a variety of operating environments. With a threshold voltage (Vth) of 1.8V, the LR110ATF-VB has a relatively low on-resistance (RDS(ON) = 114mΩ @ VGS = 10V), enabling high efficiency and low power consumption in switching applications. With its trench technology, the LR110ATF-VB provides excellent performance in efficient energy transfer and is suitable for a variety of power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
LR110ATF-VB MOSFET Detailed Parameter Description
| Parameter Name| Value|
|------------------|--------------------------------|
| Package Type| TO252 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 100V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.8V |
| On-Resistance (RDS(ON)) | 114mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 15A |
| Technology| Trench Technology|
| Parameter Name| Value|
|------------------|--------------------------------|
| Package Type| TO252 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 100V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.8V |
| On-Resistance (RDS(ON)) | 114mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 15A |
| Technology| Trench Technology|
Domain and module applications：
Applications and module examples
1. **Power management module**
LR110ATF-VB is widely used in power management modules. Its high voltage and current carrying capacity enable it to provide efficient power conversion in switching power supplies and linear power supplies, especially in application scenarios that require voltage stabilization and filtering, which can effectively reduce power consumption and heat generation.
2. **LED drive circuit**
In the LED drive circuit, LR110ATF-VB is suitable for regulating and controlling the current of LEDs. Due to its low on-resistance and efficient switching performance, this MOSFET can achieve stable brightness output and improve power efficiency.
3. **Power tools**
LR110ATF-VB can be used as a switch controller in power tools to help manage the starting and running of motors. Its high current capability and high voltage level enable it to withstand the instantaneous current of the tool at startup, ensuring equipment reliability.
4. **Battery Charger**
In battery charger design, this MOSFET can be used for power management, especially in high-efficiency charging mode. Its low RDS(ON) characteristic can reduce energy loss during charging, improve charging efficiency, and extend battery life.
The excellent performance of LR110ATF-VB makes it an ideal choice for multiple industries and applications, especially systems that require efficient energy management and switching.
1. **Power management module**
LR110ATF-VB is widely used in power management modules. Its high voltage and current carrying capacity enable it to provide efficient power conversion in switching power supplies and linear power supplies, especially in application scenarios that require voltage stabilization and filtering, which can effectively reduce power consumption and heat generation.
2. **LED drive circuit**
In the LED drive circuit, LR110ATF-VB is suitable for regulating and controlling the current of LEDs. Due to its low on-resistance and efficient switching performance, this MOSFET can achieve stable brightness output and improve power efficiency.
3. **Power tools**
LR110ATF-VB can be used as a switch controller in power tools to help manage the starting and running of motors. Its high current capability and high voltage level enable it to withstand the instantaneous current of the tool at startup, ensuring equipment reliability.
4. **Battery Charger**
In battery charger design, this MOSFET can be used for power management, especially in high-efficiency charging mode. Its low RDS(ON) characteristic can reduce energy loss during charging, improve charging efficiency, and extend battery life.
The excellent performance of LR110ATF-VB makes it an ideal choice for multiple industries and applications, especially systems that require efficient energy management and switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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