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LR024Z-VB Product details
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LR024Z-VB MOSFET Product Introduction
LR024Z-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO252, designed for high-efficiency power applications. The device has a drain-source voltage of 60V and a gate-source voltage range of ±20V, making it suitable for a variety of power management and conversion applications. The turn-on threshold voltage of LR024Z-VB is 1.7V, ensuring that it can be turned on quickly even at lower voltages. Its on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V, and drops to 73mΩ at 10V, showing excellent conduction performance and greatly reducing power consumption, making it an ideal choice for high-efficiency power solutions.
LR024Z-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO252, designed for high-efficiency power applications. The device has a drain-source voltage of 60V and a gate-source voltage range of ±20V, making it suitable for a variety of power management and conversion applications. The turn-on threshold voltage of LR024Z-VB is 1.7V, ensuring that it can be turned on quickly even at lower voltages. Its on-resistance (RDS(ON)) is 85mΩ at a gate voltage of 4.5V, and drops to 73mΩ at 10V, showing excellent conduction performance and greatly reducing power consumption, making it an ideal choice for high-efficiency power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
LR024Z-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Application temperature range**: Adapt to a wide range of working environments and have good thermal stability.
- **Package type**: TO252
- **Polarity configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Application temperature range**: Adapt to a wide range of working environments and have good thermal stability.
Domain and module applications：
Applications and modules of LR024Z-VB
1. **Power management system**: The low on-resistance and relatively high drain current of LR024Z-VB make it ideal for use in switching power supplies (SMPS) and DC-DC converters. It can significantly reduce energy loss in these applications and improve the overall efficiency of the power supply, especially for devices that are sensitive to power loss.
2. **Consumer electronics**: Due to its superior performance, this MOSFET can be used in power management modules in consumer electronics, such as chargers for laptops, tablets, and smartphones. Such products require efficient power conversion while being miniaturized.
3. **Motor drive**: LR024Z-VB is suitable for motor drive applications such as power tools and household appliances. It can withstand high currents and operate efficiently at low power consumption, suitable for brushless DC motors (BLDC) and other motor control systems.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in battery management systems (BMS), on-board chargers, and power distribution modules to ensure high efficiency and reliability of the system, especially in electric and hybrid vehicles.
With its high performance and versatility, LR024Z-VB has become an indispensable device in efficient power solutions and is widely used in power management and conversion modules in many fields.
1. **Power management system**: The low on-resistance and relatively high drain current of LR024Z-VB make it ideal for use in switching power supplies (SMPS) and DC-DC converters. It can significantly reduce energy loss in these applications and improve the overall efficiency of the power supply, especially for devices that are sensitive to power loss.
2. **Consumer electronics**: Due to its superior performance, this MOSFET can be used in power management modules in consumer electronics, such as chargers for laptops, tablets, and smartphones. Such products require efficient power conversion while being miniaturized.
3. **Motor drive**: LR024Z-VB is suitable for motor drive applications such as power tools and household appliances. It can withstand high currents and operate efficiently at low power consumption, suitable for brushless DC motors (BLDC) and other motor control systems.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in battery management systems (BMS), on-board chargers, and power distribution modules to ensure high efficiency and reliability of the system, especially in electric and hybrid vehicles.
With its high performance and versatility, LR024Z-VB has become an indispensable device in efficient power solutions and is widely used in power management and conversion modules in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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