Product introduction：
1. LNN04R040-VB Product Introduction
LNN04R040-VB is a single N-channel MOSFET that uses advanced trench technology and is designed for high-efficiency power conversion and switching applications. The device has a very low on-resistance (RDS(ON)) of 2mΩ@VGS=10V, a maximum drain-source voltage (VDS) of 40V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage of 3V. Its maximum continuous drain current is 120A, and the package type is DFN8 (5x6), which is suitable for space-constrained application scenarios. With its excellent conduction performance and high current carrying capacity, LNN04R040-VB is very suitable for switching power supplies, DC-DC converters and motor drive applications with high performance requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
II. LNN04R040-VB Parameter Description
1. **Package Type**: DFN8 (5x6mm)
- Compact package, suitable for high-density circuit design.
2. **Channel Type**: Single-N-Channel
- Suitable for high-power control and switching.
3. **Drain-Source Voltage (VDS)**: 40V
- Can withstand voltages up to 40V, suitable for low-voltage power supply applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- Maximum gate drive voltage is ±20V to ensure switch stability.
5. **Threshold Voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- Extremely low on-resistance, which can effectively reduce power consumption and improve efficiency.
7. **Drain current (ID)**: 120A
- Maximum continuous drain current is 120A, suitable for high current applications.
8. **Technology**: Trench
- Provides better current handling capability and conduction performance, suitable for high-efficiency switching applications.
Domain and module applications：
3. Application fields and module examples
1. **Switching mode power supply (SMPS)**
LNN04R040-VB is widely used in switching mode power supplies (SMPS), especially under high-frequency working conditions, to achieve efficient energy conversion. Its low on-resistance can reduce power loss and ensure higher energy efficiency.
2. **DC-DC converter**
In the DC-DC converter module, this MOSFET can be used in voltage conversion circuits with low input voltage. The 40V withstand voltage makes it suitable for power management in automotive electronic systems and portable devices.
3. **Motor drive**
LNN04R040-VB performs well in motor control and drive applications, especially for brushless DC motors (BLDC) and stepper motors with high current requirements. Its high current carrying capacity of 120A can meet the control needs of high-power motors.
4. **Load switch and protection circuit**
This MOSFET can be used in load switch circuits. Due to its low on-resistance, it can effectively reduce power loss when turned on and provide robust short-circuit protection and over-current protection for the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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