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LNH10R180-VB Product details
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LNH10R180-VB MOSFET Product Introduction
The LNH10R180-VB is a single N-channel MOSFET with advanced trench technology, packaged in a TO251 package, with excellent on-resistance and current carrying capability. With a VDS rating of 100V, this MOSFET is suitable for scenarios requiring medium and high voltage applications. Its gate drive voltage range is ±20V, suitable for a variety of switching circuits. Due to its low turn-on voltage (Vth of 1.8V) and low on-resistance (RDS(ON) = 12.5mΩ @ VGS = 10V), the device excels in efficient energy transfer and can be widely used in power conversion and motor drive fields.
The LNH10R180-VB is a single N-channel MOSFET with advanced trench technology, packaged in a TO251 package, with excellent on-resistance and current carrying capability. With a VDS rating of 100V, this MOSFET is suitable for scenarios requiring medium and high voltage applications. Its gate drive voltage range is ±20V, suitable for a variety of switching circuits. Due to its low turn-on voltage (Vth of 1.8V) and low on-resistance (RDS(ON) = 12.5mΩ @ VGS = 10V), the device excels in efficient energy transfer and can be widely used in power conversion and motor drive fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
LNH10R180-VB MOSFET Detailed Parameter Description
| Parameter Name| Value|
|------------------|--------------------------------|
| Package Type| TO251 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 100V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.8V |
| On-Resistance (RDS(ON)) | 12.5mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 65A |
| Technology| Trench Technology|
| Parameter Name| Value|
|------------------|--------------------------------|
| Package Type| TO251 |
| MOSFET Configuration| Single N-Channel|
| Drain-Source Voltage (VDS) | 100V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.8V |
| On-Resistance (RDS(ON)) | 12.5mΩ @ VGS = 10V |
| Continuous Drain Current (ID) | 65A |
| Technology| Trench Technology|
Domain and module applications：
Applications and module examples
1. **Motor drive control module**
The high current carrying capacity and low on-resistance of the LNH10R180-VB are ideal for motor drive control systems. It can work stably at higher voltages, ensuring that the driver effectively controls the start-up and operation of the motor and reduces power losses.
2. **DC-DC converter**
In DC-DC converters, the LNH10R180-VB can efficiently convert power supply voltages. Due to its low RDS(ON) and fast switching speed, this MOSFET performs well in medium-power power conversion applications, especially those that require fast switching and low energy losses.
3. **Photovoltaic inverter**
Due to its high current capability, the LNH10R180-VB is suitable for inverter modules in photovoltaic power generation systems. These modules require stable high voltage and current conversion to convert DC power to AC power, and the high efficiency and low loss characteristics of MOSFETs make them an ideal choice.
4. **Battery Management System**
In battery management for electric vehicles or energy storage systems, LNH10R180-VB can be used for power switching and current control. Its low RDS(ON) reduces heat generation, extends system life and improves efficiency.
The device is suitable for many fields such as power management, renewable energy, industrial automation, etc., especially for scenarios that require efficient and high-speed switching.
1. **Motor drive control module**
The high current carrying capacity and low on-resistance of the LNH10R180-VB are ideal for motor drive control systems. It can work stably at higher voltages, ensuring that the driver effectively controls the start-up and operation of the motor and reduces power losses.
2. **DC-DC converter**
In DC-DC converters, the LNH10R180-VB can efficiently convert power supply voltages. Due to its low RDS(ON) and fast switching speed, this MOSFET performs well in medium-power power conversion applications, especially those that require fast switching and low energy losses.
3. **Photovoltaic inverter**
Due to its high current capability, the LNH10R180-VB is suitable for inverter modules in photovoltaic power generation systems. These modules require stable high voltage and current conversion to convert DC power to AC power, and the high efficiency and low loss characteristics of MOSFETs make them an ideal choice.
4. **Battery Management System**
In battery management for electric vehicles or energy storage systems, LNH10R180-VB can be used for power switching and current control. Its low RDS(ON) reduces heat generation, extends system life and improves efficiency.
The device is suitable for many fields such as power management, renewable energy, industrial automation, etc., especially for scenarios that require efficient and high-speed switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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