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LNH08R085-VB Product details
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**
LNH08R085-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO251. It has a withstand voltage of 80V and a drain current of up to 75A, suitable for medium and high power conversion applications. The device uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)), which is 8.7mΩ at a gate voltage of 4.5V and drops to 6.4mΩ at a gate voltage of 10V. This makes it very low power consumption when turned on and highly efficient, especially suitable for high-efficiency power management applications.
**LNH08R085-VB
LNH08R085-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO251. It has a withstand voltage of 80V and a drain current of up to 75A, suitable for medium and high power conversion applications. The device uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)), which is 8.7mΩ at a gate voltage of 4.5V and drops to 6.4mΩ at a gate voltage of 10V. This makes it very low power consumption when turned on and highly efficient, especially suitable for high-efficiency power management applications.
**LNH08R085-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package type**: TO251
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Application temperature range**: Stable operation over a wide temperature range, suitable for industrial and automotive environments.
**LNH08R085-VB
- **Package type**: TO251
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Application temperature range**: Stable operation over a wide temperature range, suitable for industrial and automotive environments.
**LNH08R085-VB
Domain and module applications：
**
1. **Power Management Module**: The low on-resistance and high current capability of LNH08R085-VB make it very suitable for applications such as switch mode power supplies (SMPS), DC-DC converters, etc. It helps reduce energy loss and improve system efficiency in these modules, especially in applications that require high current and low conduction losses.
2. **Motor Drive Field**: In motor control and drive applications, this MOSFET is able to operate in a high current environment with low on-resistance, reducing power losses, making it suitable for drives in the fields of brushless DC motors (BLDC), servo motors, etc.
3. **Automotive Electronics**: Due to its high reliability and wide temperature range, LNH08R085-VB can also be used in battery management systems (BMS), on-board chargers and other power management units in electric vehicles to provide efficient power conversion.
4. **Industrial Equipment**: In industrial equipment, this MOSFET can be used in inverters and power conditioning modules to improve the overall energy efficiency and reliability of the equipment through its superior conduction performance and high current resistance.
LNH08R085-VB is an ideal device for a wide range of applications in high-efficiency power conversion, especially in modules and systems that require high performance and low power consumption.
1. **Power Management Module**: The low on-resistance and high current capability of LNH08R085-VB make it very suitable for applications such as switch mode power supplies (SMPS), DC-DC converters, etc. It helps reduce energy loss and improve system efficiency in these modules, especially in applications that require high current and low conduction losses.
2. **Motor Drive Field**: In motor control and drive applications, this MOSFET is able to operate in a high current environment with low on-resistance, reducing power losses, making it suitable for drives in the fields of brushless DC motors (BLDC), servo motors, etc.
3. **Automotive Electronics**: Due to its high reliability and wide temperature range, LNH08R085-VB can also be used in battery management systems (BMS), on-board chargers and other power management units in electric vehicles to provide efficient power conversion.
4. **Industrial Equipment**: In industrial equipment, this MOSFET can be used in inverters and power conditioning modules to improve the overall energy efficiency and reliability of the equipment through its superior conduction performance and high current resistance.
LNH08R085-VB is an ideal device for a wide range of applications in high-efficiency power conversion, especially in modules and systems that require high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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