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LNH03R031-VB Product details
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LNH03R031-VB Product Introduction
LNH03R031-VB is a high-performance, low on-resistance single N-channel MOSFET in TO251 package. It features low gate drive voltage, extremely low on-resistance, and high current carrying capacity, which can effectively improve power conversion efficiency. The device is designed based on trench technology and is suitable for applications requiring low power consumption and high-efficiency switching, such as DC-DC converters, switching power supplies, synchronous rectification and other fields.
LNH03R031-VB is a high-performance, low on-resistance single N-channel MOSFET in TO251 package. It features low gate drive voltage, extremely low on-resistance, and high current carrying capacity, which can effectively improve power conversion efficiency. The device is designed based on trench technology and is suitable for applications requiring low power consumption and high-efficiency switching, such as DC-DC converters, switching power supplies, synchronous rectification and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
LNH03R031-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**
LNH03R031-VB can be used in DC-DC converters, especially in low-voltage, high-current output applications. Its low on-resistance and high current carrying capacity enable it to significantly reduce power consumption and improve conversion efficiency. In these modules, MOSFETs are used for fast switching to ensure stable voltage output, and are widely used in power management of consumer electronic devices, computing devices, and communication equipment.
2. **Switching Power Supply (SMPS)**
This MOSFET is also suitable for switching power supplies, especially for small and medium loads. Its efficient switching performance allows the power supply to operate at high frequencies, thereby reducing the size of transformers and other passive components, and is suitable for modules such as laptop adapters, server power supplies, and industrial control power supplies.
3. **Synchronous Rectifier**
In synchronous rectifier circuits, LNH03R031-VB can be used as a substitute for diodes to improve rectification efficiency and reduce power losses. Its ultra-low on-resistance is particularly suitable for power management circuits that require high efficiency and low heat dissipation, such as high-power chargers and inverters.
4. **Battery Management System (BMS)**
In the battery management system, LNH03R031-VB can be used to control the MOSFET array of the charging and discharging paths. Its high current capability and low conduction loss make it very suitable for battery management modules in electric vehicles, power tools, energy storage systems and other equipment to ensure efficient energy flow and management.
1. **DC-DC converter**
LNH03R031-VB can be used in DC-DC converters, especially in low-voltage, high-current output applications. Its low on-resistance and high current carrying capacity enable it to significantly reduce power consumption and improve conversion efficiency. In these modules, MOSFETs are used for fast switching to ensure stable voltage output, and are widely used in power management of consumer electronic devices, computing devices, and communication equipment.
2. **Switching Power Supply (SMPS)**
This MOSFET is also suitable for switching power supplies, especially for small and medium loads. Its efficient switching performance allows the power supply to operate at high frequencies, thereby reducing the size of transformers and other passive components, and is suitable for modules such as laptop adapters, server power supplies, and industrial control power supplies.
3. **Synchronous Rectifier**
In synchronous rectifier circuits, LNH03R031-VB can be used as a substitute for diodes to improve rectification efficiency and reduce power losses. Its ultra-low on-resistance is particularly suitable for power management circuits that require high efficiency and low heat dissipation, such as high-power chargers and inverters.
4. **Battery Management System (BMS)**
In the battery management system, LNH03R031-VB can be used to control the MOSFET array of the charging and discharging paths. Its high current capability and low conduction loss make it very suitable for battery management modules in electric vehicles, power tools, energy storage systems and other equipment to ensure efficient energy flow and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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